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Datasheet W11NK100Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | W11NK100Z | STW11NK100Z STW11NK100Z
N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230 W
s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPAC |  STMicroelectronics | data |
W11 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | W110 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | W110 | Diode, Rectifier American Microsemiconductor diode | | |
| 3 | W1185LC300 | Rectifier Diode Date:- 4th March, 2014 Data Sheet Issue:- 3
Rectifier Diode
Types W1185LC300 to W1185LC450
Previous Type No.: SW38-45CXC515
Absolute Maximum Ratings
VRRM VRSM
VOLTAGE RATINGS
Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1)
MAXIMUM LIMITS
3000-4500
3100-46  IXYS rectifier | | |
| 4 | W1185LC380 | Rectifier Diode Date:- 4th March, 2014 Data Sheet Issue:- 3
Rectifier Diode
Types W1185LC300 to W1185LC450
Previous Type No.: SW38-45CXC515
Absolute Maximum Ratings
VRRM VRSM
VOLTAGE RATINGS
Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1)
MAXIMUM LIMITS
3000-4500
3100-46 IXYS rectifier | | |
| 5 | W1185LC450 | Rectifier Diode Date:- 4th March, 2014 Data Sheet Issue:- 3
Rectifier Diode
Types W1185LC300 to W1185LC450
Previous Type No.: SW38-45CXC515
Absolute Maximum Ratings
VRRM VRSM
VOLTAGE RATINGS
Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1)
MAXIMUM LIMITS
3000-4500
3100-46 IXYS rectifier | | |
| 6 | W11NB80 | STW11NB80 ®
STW11NB80
N-CHANNEL 800V - 0.65Ω - 11A - T0-247 PowerMESH™ MOSFET
TYPE STW 11NB80
s s s s s s
V DSS 800 V
R DS(on) < 0.8 Ω
ID 11 A
TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE STMicroelectronics data | | |
| 7 | W11NK100Z | STW11NK100Z STW11NK100Z
N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230 W
s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPAC STMicroelectronics data | |
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| Número de pieza | Descripción | Fabricantes | |
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