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STW11NK100Z

N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247

Zener-Protected SuperMESH™Power MOSFET

TYPE

VDSS RDS(on)

ID

Pw

STW11NK100Z 1000 V < 1.38 Ω 8.3 A 230 W

s TYPICAL RDS(on) = 1.1 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s GATE CHARGE MINIMIZED

s VERY LOW INTRINSIC CAPACITANCES

s VERY GOOD MANUFACTURING

REPEATIBILITY

3

2

1

TO-247

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s IDEAL FOR OFF-LINE POWER SUPPLIES

ORDERING INFORMATION

SALES TYPE

STW11NK100Z

MARKING

W11NK100Z

PACKAGE

TO-247

PACKAGING

TUBE

December 2003

1/9

STW11NK100Z

Safe Operating Area

Thermal Impedance

Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

4/9

Fig. 1: Unclamped Inductive Load Test Circuit

STW11NK100Z

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

7/9