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STD7N80K5 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 STD7N80K5은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 STD7N80K5 기능
기능 N-channel Power MOSFET
제조업체 STMicroelectronics
로고 STMicroelectronics 로고


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STD7N80K5 데이터시트, 핀배열, 회로
STD7N80K5, STP7N80K5,
STU7N80K5
N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5
Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet - production data
TAB
23
1
DPAK
TAB
TAB
3
2
1
TO-220
IPAK
3
2
1
Features
Order codes
STD7N80K5
STP7N80K5
STU7N80K5
VDS
800 V
RDS(on)max
1.2 Ω
ID PTOT
6 A 110 W
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
Figure 1. Internal schematic diagram
D(2, TAB)
Applications
Switching applications
G(1)
S(3)
AM01476v1
Description
These N-channel Zener-protected Power
MOSFETs are designed using ST’s revolutionary
avalanche-rugged very high voltage
SuperMESH™ 5 technology, based on an
innovative proprietary vertical structure. The
result is a dramatic reduction in on-resistance,
and ultra-low gate charge for applications which
require superior power density and high
efficiency.
Order codes
STD7N80K5
STP7N80K5
STU7N80K5
Table 1. Device summary
Marking
Package
7N80K5
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
October 2013
This is information on a product in full production.
DocID023448 Rev 5
1/21
www.st.com




STD7N80K5 pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STD7N80K5, STP7N80K5, STU7N80K5
(TCASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. On/off states
Test conditions
V(BR)DSS
Drain-source breakdown
voltage (VGS= 0)
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
Gate body leakage current
(VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on-
resistance
ID = 1 mA
VDS = 800 V
VDS = 800 V, Tc=125 °C
VGS = ± 20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID= 3 A
Min. Typ. Max. Unit
800 V
1 µA
50 µA
±10 µA
34 5V
0.95 1.2 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
- 360 -
VDS =100 V, f=1 MHz, VGS=0 - 30 -
-1 -
pF
pF
pF
Co(tr)(1)
Co(er)(2)
Equivalent capacitance time
related
Equivalent capacitance
energy related
VGS = 0, VDS = 0 to 640 V
- 47 - pF
- 20 - pF
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1 MHz, ID=0
VDD = 640 V, ID = 6 A
VGS =10 V
(see Figure 17)
-6 -
- 13.4 -
- 3.7 -
- 7.5 -
Ω
nC
nC
nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/21 DocID023448 Rev 5

4페이지










STD7N80K5 전자부품, 판매, 대치품
STD7N80K5, STP7N80K5, STU7N80K5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
6'3
6 6$3

!-V
6$3
6

 
 
 
 
 

    1GN#
Figure 10. Capacitance variations
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!-V
#ISS
#OSS
#RSS

    6$36
Figure 12. Normalized gate threshold voltage vs
temperature
6'3TH
NORM

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!-V
Figure 9. Static drain-source on-resistance
2$3ON
/HM
6'36
!-V




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Figure 11. Source-drain diode forward
characteristics
63$
6
!-V

4*   #

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4* #

     
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Figure 13. Normalized on-resistance vs
temperature
2$3ON
NORM

)$!
6'36
!-V

 
 




  4* #


    4* #
DocID023448 Rev 5
7/21
21

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STD7N80K5

N-channel Power MOSFET

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