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STD4N80K5 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 STD4N80K5은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 STD4N80K5 자료 제공

부품번호 STD4N80K5 기능
기능 N-CHANNEL MOSFET
제조업체 STMicroelectronics
로고 STMicroelectronics 로고


STD4N80K5 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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STD4N80K5 데이터시트, 핀배열, 회로
STD4N80K5, STF4N80K5,
STP4N80K5, STU4N80K5
N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH™ 5
Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
TAB
3
2
1
TO-220
IPAK
3
2
1
Figure 1. Internal schematic diagram
' 7$%
Features
Order codes VDS RDS(on) max ID
STD4N80K5
STF4N80K5
800 V
STP4N80K5
2.5 Ω
3A
STU4N80K5
Outstanding RDS(on) * area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
PTOT
60 W
20 W
60 W
Applications
Switching applications
* 
6 
AM01476v1
Description
These N-channel Zener-protected Power
MOSFETs are designed using ST’s revolutionary
avalanche-rugged very high voltage
SuperMESH™ 5 technology, based on an
innovative proprietary vertical structure. The
result is a dramatic reduction in on-resistance,
and ultra-low gate charge for applications which
require superior power density and high
efficiency.
Order code
STD4N80K5
STF4N80K5
STP4N80K5
STU4N80K5
Table 1. Device summary
Marking
Packages
4N80K5
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2013
This is information on a product in full production.
DocID025105 Rev 2
1/23
www.st.com




STD4N80K5 pdf, 반도체, 판매, 대치품
Electrical characteristics
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 800 V
drain current (VGS = 0) VDS = 800 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 100 μA
Static drain-source on-
resistance
VGS = 10 V, ID = 1.5 A
Min. Typ. Max. Unit
800 V
1 μA
50 μA
±10 μA
3 4 5V
2.1 2.5 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 175 - pF
- 20 - pF
- 1 - pF
(1)
Co(tr)
Equivalent
capacitance time
related
VDS = 0 to 640 V, VGS = 0
- 26 - pF
Equivalent
(2)
Co(er) capacitance energy
related
VDS = 0 to 640 V, VGS = 0
Rg Gate input resistance f=1 MHz, ID = 0
- 11 - pF
- 15 - Ω
Qg Total gate charge
VDD = 640 V, ID = 3 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 19)
- 10.5 - nC
- 2 - nC
- 7.5 - nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/23 DocID025105 Rev 2

4페이지










STD4N80K5 전자부품, 판매, 대치품
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Electrical characteristics
Figure 8. Output characteristics
ID (A)
5
VGS=10, 11 V
AM15989v1
9V
4
Figure 9. Transfer characteristics
ID (A)
AM15990v1
5 VDS=20V
4
3 8V 3
22
1 7V
6V
0
0 4 8 12 16 VDS(V)
1
0
5 6 7 8 9 10 VGS(V)
Figure 10. Gate charge vs gate-source voltage
VGS
(V)
12 VDS
VDD=640V
ID=3A
AM15991v1
VDS (V)
600
10 500
8 400
Figure 11. Static drain-source on-resistance
RDS(on)
(Ω)
VGS=10V
AM15992v1
4
3
6 300
4 200
2 100
00
0 2 4 6 8 10 Qg(nC)
2
1
0
0 0.5 1 1.5 2 2.5 ID(A)
Figure 12. Capacitance variations
Figure 13. Normalized gate threshold voltage vs
temperature
C
(pF)
10000
AM15993v1
VGS(th)
(norm)
1
ID=100µA
VDS=VGS
AM15639v1
1000
Ciss
0.8
100 Coss
Crss 0.6
10
1
0.1 1
10 100 VDS(V)
0.4
-50 0 50 100 TJ(°C)
DocID025105 Rev 2
7/23
23

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관련 데이터시트

부품번호상세설명 및 기능제조사
STD4N80K5

N-CHANNEL MOSFET

STMicroelectronics
STMicroelectronics

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