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PDF MwT-LN600 Data sheet ( Hoja de datos )

Número de pieza MwT-LN600
Descripción 26 GHz Super Low Noise pHEMT Device
Fabricantes MWT 
Logotipo MWT Logotipo



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MwT-LN600
26 GHz Super Low Noise pHEMT Device
May 2010
FEATURES
0.50 dB Minimum Noise Figure at 12 GHz
8.0 dB Associated Gain at 12 GHz
20.0 dBm P1dB at 12 GHz
0.15 Micron x 600 Micron Gate
APPLICATIONS
Excellent Choice for Super Low Noise Applications
Ideal for Commercial, Military, Hi-Rel Space Applications
DESCRIPTION
The MwT- LN600 is a super low noise, quasi enhancement-mode pHEMT whose nominal 0.15 micron gate length and
600 micron gate width make it ideally suited for applications requiring very low noise and high associated gain up to 20
GHz. The device is equally effective for wideband (e.g. 6 to 18 GHz) and narrow-band applications. Each wafer can be
screened to meet quality and reliability requirements of space and military applications.
RF SPECIFICATIONS AT Ta = 25 C
S YM BO L
PARAMETERS & CONDITIONS
FREQ UNITS
MIN
TYP
NF min
M inim um Noise Figure
V ds= 2.5V Ids = 40 m A (V gs = 0)
4 GHz
12 GHz
dB
0.2
0.5
SSG
Associated Gain
V ds= 2.5V Ids = 40 m A (V gs = 0)
4 GHz
12 GHz
dB
11.0
8.0
12.0
9.0
P1dB
Output P ower at 1dB Com pression
V ds= 3.0V Ids = 100 m A
12 GHz
dBm
20.0
Note: MWT-LN600 is a quas i enhanc ement mode dev ic e. For bes t nois e f igure, V gs bias v oltage s hould be s et at
either 0 or s lightly pos itiv e v oltages to ac hiev e the target operating c urrent.
DC SPECIFICATIONS AT Ta = 25 C
S YM BO L
Im a x
Gm
Vp
BVGSO
BVGDO
PARAMETERS & CONDITIONS
M axim um Current
Vds = 2.5V Vgs = 0.6V
Trans c onduc tanc e
Vds = 2.5V Vgs = 0.2V
P inch-off V oltage
V ds = 2.0V Ids = 1.0m A
Gate-to-Source Breakdown Voltage
Igs = -0.6m A
Gate-to-Drain Breakdown Voltage
Igd = -0.6m A
Rth *
Chip Therm al Res is tanc e
* Ov erall Rth depends on c hip mounting
FREQ
UNITS
mA
mS
V
V
V
ºC/W
MIN
150
300
-6.0
-7.5
TYP
175
400
-0.2
-8.0
-9.0
85
MAX
MAX
250
4268 Solar Way
Fremont, CA 94538
P (510) 651-6700
F (510) 952-4000
www.mwtinc.com

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