|
|
|
부품번호 | CD216A-B120R 기능 |
|
|
기능 | MITE Chip Diode | ||
제조업체 | Bourns | ||
로고 | |||
전체 7 페이지수
Features
■ Lead free versions available
■ RoHS compliant (lead free version)*
■ Low profile
■ Surface mount
■ Very low forward voltage drop
Applications
■ Cellular phones
■ PDAs
■ Desktop PCs and notebooks
■ Digital cameras
■ MP3 players
CD216A-B120L ~ B140 MITE Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real
estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a
choice of repetitive peak reverse voltage of 20 V up to 40 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
B120L
Forward Voltage (Max.)
(If = 1 A)
Typical Junction
Capacitance*
VF 0.45
CT 90
Reverse Current (Max.)
(at Rated VR)
IR 400
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
B120L
Repetitive Peak Reverse Voltage
DC Blocking Voltage
RMS Voltage
Average Forward Current
@ TL = 130 °C
Peak Forward Surge Current**
Max. Instantaneous Forward Voltage***
@ IF = 0.1 A
@ IF = 1.0 A
@ IF = 2.0 A
@ IF = 3.0 A
Max. Instantaneous Reverse Current
@ VR = 40 V
@ VR = 30 V
@ VR = 20 V
@ VR = 10 V
@ VR = 5 V
Thermal Resistance
Junction to Lead (Anode)
Junction to Tab (Cathode)
Junction to Ambient
Storage Temperature
Junction Temperature
VRRM
VDC
VRMS
IO
IFSM
VF
IR
RθJL
RθJTAB
RθJA
TSTG
TJ
20
20
14
50
0.34
0.45
0.65
0.4
0.1
** Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method).
*** Pulse Test; Pulse Width = 300 uS, Duty Cycle = 2 %.
CD216-
B120R
B130L
0.53
0.38
75 70
10 410
CD216-
B120R
B130L
20 30
20 30
14 21
1
50 50
0.455
0.53
0.595
0.30
0.38
0.52
0.0100
0.0010
0.0005
0.41
0.13
0.05
35
20
250
-55 to +125
-55 to +150
B140
0.55
60
500
Unit
V
pF
µA
B140
40
40
28
40
0.36
0.55
0.85
0.50
0.15
Unit
V
V
V
A
A
V
mA
°C/W
°C/W
°C/W
°C
°C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD216A-B120L ~ B140 MITE Chip Diode
Rating and Characteristic Curves: CD216A-B120R
Forward Characteristics
10
Ta = 25 °C
Pulsewidth: 300 µs
1
Reverse Characteristics
1000
125 °C
100
100 °C
10
1
0.1 25 °C
125 °C
0.1
0.2
100 °C
25 °C
0.4
0.6
Forward Voltage (Volts)
0.01
0
5 10 15 20
0.8 Reverse Voltage (Volts)
25
Derating Curve
1.25
1.00
0.75
0.50
0.25
0.00
25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
50 75 100
Lead Temperature (°C)
125
150
Capacitance Between Terminals
150
125
100
F = 1 MHz
Ta = 25 °C
75
50
25
0
0 10 20 30
Reverse Voltage (Volts)
40
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
4페이지 CD216A-B120L ~ B140 MITE Chip Diode
Packaging Information
The product will be dispensed in Tape and Reel format (see diagram below).
P0
P1
d Index Hole
E
T
F
W
B
120 °
D2
D1 D
PA
C
Trailer
Device
Leader
....... ....... ....... .......
End ....... ....... ....... .......
10 pitches (min.)
10 pitches (min.)
Direction of Feed
Item
Carrier Width
Carrier Length
Carrier Depth
Sprocket Hole
Reel Outside Diameter
Reel Inner Diameter
Feed Hole Diameter
Sprocket Hole Position
Punch Hole Position
Punch Hole Pitch
Sprocket Hole Pitch
Embossment Center
Overall Tape Thickness
Tape Width
Reel Width
Quantity per Reel
Symbol
A
B
C
d
D
D1
D2
E
F
P
P0
P1
T
W
W1
--
DO-216AA
2.90 ± 0.10
(0.114 - 0.004)
5.30 ± 0.10
(0.209 - 0.004)
1.37 ± 0.10
(0.054 - 0.004)
1.55 ± 0.05
(0.061 - 0.002)
330 / 178.0
(12.992 / 7.007)
75.0
(2.953)
MIN.
13.0 ± 0.20
(0.512 - 0.008)
1.75 ± 0.10
(0.069 - 0.004))
5.50 ± 0.05
(0.217 - 0.002)
4.00 ± 0.10
(0.157 - 0.004)
4.00 ± 0.10
(0.157 - 0.004)
2.00 ± 0.05
(0.079 - 0.002)
0.40 ± 0.10
(0.016 - 0.004)
12.00 ± 0.20
(0.472 - 0.008)
18.4
(0.724)
MAX.
3,000
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Start
DIMENSIONS:
MM
(INCHES)
W1
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
Reliable Electronic Solutions
Asia-Pacific:
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
Europe:
Tel: +41-(0)41 768 5555 • Fax: +41-(0)41 768 5510
The Americas:
Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
REV. 01/05
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ CD216A-B120R.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CD216A-B120L | MITE Chip Diode | Bourns |
CD216A-B120R | MITE Chip Diode | Bourns |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |