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PDF NRVBB20H100CTT4G Data sheet ( Hoja de datos )

Número de pieza NRVBB20H100CTT4G
Descripción SWITCHMODE Power Rectifier
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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MBR20H100CTG,
MBRB20H100CTG,
MBRF20H100CTG,
NRVBB20H100CTT4G
Switch-mode
Power Rectifier
100 V, 20 A
Features and Benefits
Low Forward Voltage: 0.64 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately):
1.9 Grams (TO−220)
1.7 Grams (D2PAK)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
1
2, 4
3
4
1
2
3
TO−220
CASE 221A
STYLE 6
1
2
3
TO−220 FULLPAKt
CASE 221D
STYLE 3
1
2
3
4
D2PAK 3
CASE 418B
STYLE 3
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 12
1
Publication Order Number:
MBR20H100CT/D

1 page




NRVBB20H100CTT4G pdf
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
10000
TJ = 25°C
1000
100
10
0 20 40 60 80 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
100
D = 0.5
10
0.2
0.1
1 0.05
0.01
0.1
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t1, TIME (sec)
Figure 8. Thermal Response Junction−to−Ambient for MBR20H100CT, MBRB20H100CT
and NRVBB20H100CTT4G
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.01
P(pk)
t1
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Case for MBR20H100CT, MBRB20H100CT
and NRVBB20H100CTT4G
www.onsemi.com
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