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Datasheet GFP201 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1GFP201Cermet Industrial Panel Controls

GF201 Series TOCOS® PANEL CONTROLS 20mm Diameter, Single-Turn, Cermet Industrial Panel Controls GFP201 GF201 Features Ⅲ 20mm diameter, single-turn industrial panel controls Ⅲ Cermet film element Ⅲ Single unit, single shaft Ⅲ Excellent environmental characteristics Ⅲ Wide temperature
TOCOS
TOCOS		data


GFP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1GFP201Cermet Industrial Panel Controls

GF201 Series TOCOS® PANEL CONTROLS 20mm Diameter, Single-Turn, Cermet Industrial Panel Controls GFP201 GF201 Features Ⅲ 20mm diameter, single-turn industrial panel controls Ⅲ Cermet film element Ⅲ Single unit, single shaft Ⅲ Excellent environmental characteristics Ⅲ Wide temperature
TOCOS
TOCOS		data
2GFP4N60N-channel enhancement mode power field effect Transistors

Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 4N60 GFP 4N60 General description  These N-channel enhancement mode power field effect Transistors are produced using planar stripe DMOS technology.  This advanced technology has been especially tailored to minimize on-state r
Chinahaiso electronic
Chinahaiso electronic		transistor
3GFP50N03N-Channel Enhancement-Mode MOSFET

GFP50N03 N-Channel Enhancement-Mode MOSFET TGREENNCFHET® VDS 30V RDS(ON) 13mΩ ID 50A D TO-220AB 0.415 (10.54) Max. 0.154 (3.91) 0.142 (3.60)Dia. 0.113 (2.87) * 0.102 (2.56) 0.155 (3.93) D 0.134 (3.40) 0.410 (10.41) 0.350 (8.89) PIN G DS 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.
General Semiconductor
General Semiconductor		mosfet
4GFP50N06MOSFET, Transistor

Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 50N06 GFP 50N06 FEATURES (参数) Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless othe
Chinahaiso electronic
Chinahaiso electronic		mosfet
5GFP5N60N-Channel enhancement mode power field effect Transistors

GFP5N60 General Description(概述) These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP5N60是增强型N沟道功率场效应管，采用平面条形DMOS 工艺生产制造。 This advanced technology has been especially tailored to
ETC
ETC		transistor
6GFP5N60Field effect transistor

东莞市华索电子有限公司 http://www.chinahaiso.com 场效应晶体管 GFP 5N60 GFP 5N60 概述 GFP 5N60 是增强型 N 沟道功率场效应管，采用平面条形 DMOS 工艺生产制造。 GFP5N60 具有低导通电阻、优越的开关特性以及抗雪崩击 穿能力，适合用�
Haiso
Haiso		transistor
7GFP60N03N-Channel Enhancement-Mode MOSFET

GFP60N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56) D H C N ct E ET u R d T ENF ro P New G ® 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) VDS 30V RDS(ON) 11mΩ ID 60A D G * 0.155 (3.93) 0
General Semiconductor
General Semiconductor		mosfet



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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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