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부품번호 | IKD06N60R 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Infineon Technologies | ||
로고 | |||
전체 16 페이지수
IGBT
IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage
IKD06N60R
600VTRENCHSTOPTMRC-Seriesforhardswitchingapplications
Datasheet
IndustrialPowerControl
IKD06N60R
TRENCHSTOPTMRC-Seriesforhardswitchingapplications
Maximumratings
Parameter
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
Gate-emitter voltage
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
PowerdissipationTC=25°C
Operating junction temperature
Storage temperature
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020)
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tvj
Tstg
Value
600
12.0
6.0
18.0
18.0
12.0
6.0
18.0
±20
5
100.0
-40...+175
-55...+150
260
Unit
V
A
A
A
A
A
V
µs
W
°C
°C
°C
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,1)
junction - case
Diode thermal resistance,2)
junction - case
Thermal resistance, min. footprint
junction - ambient
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Rth(j-a)
Max.Value
Unit
1.50 K/W
3.60 K/W
75 K/W
50 K/W
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
4 Rev.2.5,2014-03-12
4페이지 IKD06N60R
TRENCHSTOPTMRC-Seriesforhardswitchingapplications
4
10
3
tp=1µs
50µs
2 20µs
1 10µs
200µs
1 500µs
DC
0
0.1 1 10 100
f,SWITCHINGFREQUENCY[kHz]
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V,
VGE=15/0V,rG=23Ω,PCBmounting,6cm2
Cu, Ptot=2,4W)
0.1
1 10 100 1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V)
110
100
12
90
80 10
70
60 8
50 6
40
30 4
20
2
10
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
0
0 25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
7 Rev.2.5,2014-03-12
7페이지 | |||
구 성 | 총 16 페이지수 | ||
다운로드 | [ IKD06N60R.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IKD06N60R | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon Technologies |
IKD06N60RA | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |