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부품번호 | GLT625608-10TC 기능 |
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기능 | 32K x 8 SLOW SPEED CMOS STATIC RAM | ||
제조업체 | ETC | ||
로고 | |||
G-LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
Features :
Description :
∗ Available in 70/100ns(MAX.)
GLT625608 is a 262,144-bit static random access
∗ Automatic power-down when chip disabled memory organized as 32,768 words by 8 bits and
∗ Low power consumption:
operates from a single 5 volt supply. Inputs and
GLT625608
three-state outputs are TTL compatible and allow for
-467.5mW(Max.) Operating
direct interfacing with system I/O bus. The
∗ -500µW(Max.)Standby
∗ TTL compatible interface levels
GLT625608 is available in a standard 330 mil SOP
packages. Other packages will also available upon
request.
∗ Single 5V power supply
∗ Fully static operation
∗ Three state outputs
∗ 256K bit EPROM pin compatible
∗ Data Retention as low as 2V
∗ Industrial Grade (-40°C~85°C) available.
Pin Configurations:
GLT625608
Function Block Diagram :
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-1-
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
G-LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
Low VCC Data Retention Waveform ( CE Controlled )
AC Test Conditions
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing
Reference Level
0V to 3.0V
3ns
1.5V
AC Test Loads and Waveforms
Ω
Ω
Ω
Ω
Ω
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-4-
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
4페이지 G-LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
AC Electrical Characteristics
Write Cycle
JEDEC
Parameter
Name
tAVAX
tELWH
tAVWL
tAVWH
tWLWH
tWHAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
Parameter
Name
tWC
tCW
tAS
tAW
tWP
tWR1
tWHZ
tDW
tDH
tOHZ
tOW
Parameter
Write Cycle Time
Chip Enable to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
Switching Waveforms (Write Cycle)
WRITE CYCLE 1(1)
625608-70
625608-10
Min.
Max. Min.
Max. Unit
70
- 100
- ns
65 - 90 - ns
0 - 0 - ns
65 - 90 - ns
55 - 75 - ns
5 - 5 - ns
0 30 0
35 ns
35 -
40 -
ns
0-
0-
ns
0 30
0 40 ns
5-
5-
ns
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-7-
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ GLT625608-10TC.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
GLT625608-10TC | 32K x 8 SLOW SPEED CMOS STATIC RAM | ETC |
GLT625608-10TS | 32K x 8 SLOW SPEED CMOS STATIC RAM | ETC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |