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부품번호 | STP11N65M5 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 25 페이지수
STB11N65M5, STD11N65M5, STF11N65M5,
STP11N65M5, STU11N65M5
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET
in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V < 0.48 Ω 9 A
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
TAB
TAB
2
3
1
D2PAK
23
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
Marking
11N65M5
'
3
!-V
Package
D2PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2012
This is information on a product in full production.
Doc ID 022864 Rev 2
1/25
www.st.com
25
Electrical characteristics STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 4.5 A
Min. Typ. Max. Unit
650 V
1 µA
100 µA
± 100 nA
3 4 5V
0.43 0.48 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
644 pF
- 18 - pF
2.5 pF
Co(tr)(1)
Co(er)(2)
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 520 V, VGS = 0
- 55 - pF
- 17 - pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
- 5 -Ω
Qg Total gate charge
VDD = 520 V, ID = 4.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
17 nC
- 4.6 - nC
8.5 nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/25 Doc ID 022864 Rev 2
4페이지 STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
ID
AM15401v1
ID
(A) VGS=10V
(A)
16 16
8V VDS=25V
14 14
7V
12 12
AM15402v1
10 10
88
66
44
2
0 6V
0 5 10 15 20 25 VDS(V)
2
0
3 4 5 6 7 8 9 VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
VGS
(V) VDD=520V
12 ID=4.5A
AM15403v1
VDS
(V)
500
RDS(on)
(Ω)
0.55
VGS=10V
AM15404v1
10
0.5
400
8 0.45
300
6 0.4
200
4 0.35
2 100 0.3
00
0 5 10 15 20 Qg(nC)
0.25
0 1 2 3 4 5 6 7 8 ID(A)
Figure 12. Capacitance variations
C
(pF)
Figure 13. Output capacitance stored energy
AM15405v1
Eoss
(µJ)
3.5
AM15406v1
1000
100
10
1
0.1 1
Ciss
Coss
Crss
10 100 VDS(V)
3
2.5
2
1.5
1
0.5
0
0 200 400 600 VDS(V)
Doc ID 022864 Rev 2
7/25
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부품번호 | 상세설명 및 기능 | 제조사 |
STP11N65M2 | N-channel Power MOSFET | STMicroelectronics |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |