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Datasheet BDX53B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BDX53B | SILICON POWER DARLINGTON TRANSISTORS NPN BDX53 – BDX53A – BDX53B – BDX53C SILICON POWER DARLINGTON TRANSISTORS
The BDX53, BDX53A, BDX53B and BDX53C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intented for use in audio amplifiers, medi |  Comset Semiconductors | transistor |
| 2 | BDX53B | Silicon NPN Power Transistors SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX53/A/B/C
DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX54/A/B/C
APPLICATIONS ·Power linear and switching applications ·Hammer drivers,audio amplifiers
PINNING PIN 1 2 |  SavantIC | transistor |
| 3 | BDX53B | Plastic Medium-Power Complementary Silicon Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BDX53B/D
Plastic Medium-Power Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Su |  Motorola Inc | transistor |
| 4 | BDX53B | Plastic Medium-Power Complementary Silicon Transistors BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
Plastic Medium-Power Complementary Silicon Transistors
These devices are designed for general−purpose amplifier and low−speed switching applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustai |  ON Semiconductor | transistor |
| 5 | BDX53B | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDX53B - BDX53C BDX54B - BDX54C
Complementary power Darlington transistors
Features
■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
■ Audio amplifiers ■ Linear and switching industrial equipmen |  STMicroelectronics | transistor |
BDX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BDX10 | Bipolar NPN Device
BDX10
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.19  Seme LAB data | | |
| 2 | BDX11 | Bipolar NPN Device BDX11
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 3 | BDX12 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package BDX12
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max Seme LAB data | | |
| 4 | BDX14 | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | | |
| 5 | BDX14A | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDX14A
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V(Min.)
APPLICATIONS ·Designed for LF Large Signal Power Amplification
and Medium Current Switching
 Inchange Semiconductor transistor | | |
| 6 | BDX14A | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | | |
| 7 | BDX14AA | PNP SILICON TRANSISTOR/ EPITAXIAL BASE BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86 (0.145) rad.
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
11.94 (0.470) 12.70 (0.500)
14.48 (0.570) 14.99 (0.590)
FEATURES:
• LF Larg Seme LAB transistor | |
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