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Datasheet BLV31 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BLV31 | NPN SILICON RF POWER TRANSISTOR BLV31
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L STUD DESCRIPTION:
The ASI BLV31 is Designed for use in VHF amplifiers
B A 45°
C E B E
FEATURES:
• PG = 16.5 dB Typical at 224 MHz • Omnigold™ Metallization System
F G D E
C J I
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC 3A 60 V 4 |  Advanced Semiconductor | transistor |
| 2 | BLV31 | Trans GP BJT NPN 33V 12.5A 4-Pin SOT-147 |  New Jersey Semiconductor | data |
BLV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BLV10 | VHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLV10 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmi  NXP Semiconductors transistor | | |
| 2 | BLV10 | VHF power transistor New Jersey Semiconductor transistor | | |
| 3 | BLV100 | UHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLV100 UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile • Gol NXP Semiconductors transistor | | |
| 4 | BLV103 | UHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLV103 UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for optimum temper NXP Semiconductors transistor | | |
| 5 | BLV108 | Vertical N-channel MOSFET
BLV108
N 沟纵向 MOSFET 描述: 描述:
N 沟增强型 VDMOS，高速开关，无二次击穿
产品应用：
电话机电路 继电器电路 驱动电路等
工作条件
符号
VDSS VGSS ID PD Tj, TSDG
(T=25℃ (T=25℃)
参数
极限值
200 + 20 300 1 -55 to +150
单位  SHANGHAI BELLING mosfet | | |
| 6 | BLV11 | VHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLV11 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmi NXP Semiconductors transistor | | |
| 7 | BLV11 | VHF power transistor New Jersey Semiconductor transistor | |
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| Número de pieza | Descripción | Fabricantes | |
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