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PDF L6690 Data sheet ( Hoja de datos )
| Número de pieza | L6690 | |
| Descripción | INFRARED PULSED LASER DIODE | |
| Fabricantes | Hamamatsu Corporation | |
| Logotipo |  |
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FEATURES
High duty ratio (DR 2.5%)
High speed rise time (tr=0.5 ns typ.)
APPLICATIONS
Laser rader
Range finder
Excitation light source
Optical trigger
Security barrier
INFRARED PULSED LASER DIODE
L6690
Figure 1: Dimensional Outline (Unit: mm)
Glass Window
LD Chip
9.0
+0
-0.1
5.7 0.2
2.8 0.3
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Value
Pulsed Foward Current
IFP 3
Reverse Voltage
VR 2
Pulsed Radiant Output Power
ep
3
Pulse Duration (FWHM)
tw 130
Duty Ratio
DR 2.5
Operating Temperature
Top -35 to +80
Storage Temperature
Tstg -40 to +85
Unit
A
V
W
ns
%
0.45
2.54
Side View
Common to Case
1.0
LD Cathode
PD Anode
Bottom View
(Pin Connection)
PD LD
LD Cathode
PD Anode
Common to Case
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25 )
Parameter
Pulsed Radiant Power
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Rise Time
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Monitor PD Current
Symbol
ep
p
VF
tr
Ith
Im
Condition
IFP=2.5A
FWHM
IFP=2.5A
FWHM
IFP=2.5A
IFP=2.5A
Min.
1.8
-
-
-
-
6
27
-
-
Note: General operating condition ep 2 W, tw 100 ns, Repetition frequency 100 kHz
Typ.
-
870
3
2.7
0.5
8
30
0.5
0.25
Max.
-
-
-
-
-
10
33
-
-
Unit
W
nm
nm
V
ns
degree
degree
A
mA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. C 1998 Hamamatsu Photonics K.K.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet L6690.PDF ] | |
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