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Datasheet IRFZ44N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IRFZ44N | Power MOSFET, Transistor PD - 94053
IRFZ44N
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 17.5mΩ
G S
ID = 49A
Description
Advanced HEXFET® Power MOSFETs from Interna | International Rectifier | mosfet |
2 | IRFZ44N | N-channel enhancement mode TrenchMOS transistor
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state | NXP Semiconductors | transistor |
3 | IRFZ44N | Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor | mosfet |
4 | IRFZ44N | N-CHANNEL Power MOSFET APPLICATION
Buck Converter High Side Switch DC motor control , Ups ...etc , & other Application
VDSS 55V
RDS(ON) Max. 17.5mȍ
PIN CONFIGURATION
TO-220 Front View
ID 50A
IRFZ44N
N-CHANNEL Power MOSFET
FEATURES
Ultra Low ON Resistance Low Gate Charge Dynamic dv/dt Rating Induc | Matsu | mosfet |
5 | IRFZ44N | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ44N
FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.032Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for low voltage, high | INCHANGE | mosfet |
IRF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IRF-182xx | Inductors w w ELECTRICAL SPECIFICATIONS
MATERIAL SPECIFICATIONS
Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite.
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4U
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Inductors
Epoxy Conformal Coated Uniform Roll Coated
FEATURES
IRF
Vishay Dale
• Flame-retardant coating and color band identification. Vishay Intertechnology inductor | | |
2 | IRF-46 | Inductors Epoxy Conformal Coated
IRF-46
Vishay Dale
Inductors
Epoxy Conformal Coated, Axial Leaded
FEATURES
• Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi Vishay Siliconix inductor | | |
3 | IRF034 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF034
DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power supp Inchange Semiconductor mosfet | | |
4 | IRF034 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PD - 90585
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF034
IRF034 60V, N-CHANNEL
BVDSS RDS(on) 60V 0.050Ω
ID 25Α
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi International Rectifier transistor | | |
5 | IRF044 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF044
DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power sup Inchange Semiconductor mosfet | | |
6 | IRF044 | N-CHANNEL POWER MOSFET IRF044
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
7.87 (0.310) 6.99 (0.275)
1
20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07 Seme LAB mosfet | | |
7 | IRF044 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE
PD - 90584
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α
IRF044 60V, N-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of International Rectifier transistor | |
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