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Datasheet GI858 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GI858 | FAST SWITCHING PLASTIC RECTIFIER GI850 THRU GI858
FAST SWITCHING PLASTIC RECTIFIER
Reverse Voltage - 50 to 800 Volts
DO-201AD
Forward Current - 3.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Fast switching for high efficiency ♦ Construc | General Semiconductor | rectifier |
2 | GI858 | Fast Switching Plastic Rectifier www.DataSheet.co.kr
GI850 thru GI858
Vishay General Semiconductor
Fast Switching Plastic Rectifier
FEATURES
• Fast switching for high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant | Vishay Siliconix | rectifier |
GI8 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GI8050 | NPN EPITAXIAL TRANSISTOR
ISSUED DATE :2005/05/06 REVISED DATE :
GI8050
Description Features
NPN EPITAXIAL TRANSISTOR
The GI8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GI8550
Package Dimensions
GTM transistor | | |
2 | GI80LS02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/02/15 REVISED DATE :
GI80LS02
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 8m 75A
The GI80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance GTM mosfet | | |
3 | GI80N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/22 REVISED DATE :
GI80N03
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 8m 80A
The GI80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance a GTM mosfet | | |
4 | GI810 | GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER GI810 THRU GI818
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 1000 Volts
* D
DO-204AC
0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA.
Forward Current - 1.0 Ampere
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High tempera General Semiconductor rectifier | | |
5 | GI810 | Glass Passivated Junction Fast Switching Rectifier www.DataSheet.co.kr
GI810 thru GI818
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
FEATURES
• Superectifier structure for high reliability condition
SUPERECTIFIER
®
• Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leak Vishay Siliconix rectifier | | |
6 | GI811 | GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER GI810 THRU GI818
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Reverse Voltage - 50 to 1000 Volts
* D
DO-204AC
0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA.
Forward Current - 1.0 Ampere
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High tempera General Semiconductor rectifier | | |
7 | GI811 | Glass Passivated Junction Fast Switching Rectifier www.DataSheet.co.kr
GI810 thru GI818
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Rectifier
FEATURES
• Superectifier structure for high reliability condition
SUPERECTIFIER
®
• Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leak Vishay Siliconix rectifier | |
Esta página es del resultado de búsqueda del GI858. Si pulsa el resultado de búsqueda de GI858 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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