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PDF C1980 Data sheet ( Hoja de datos )

Número de pieza C1980
Descripción NPN Transistor - 2SC1980
Fabricantes Panasonic Semiconductor　
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! C1980 Hoja de datos, Descripción, Manual

Transistor
2SC1980
Silicon NPN epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SA921
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
120
120
7
50
20
250
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = 50V, IE = 0
VCE = 50V, IB = 0
IC = 10µA, IE = 0
0.1 µA
1 µA
120 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 5V, IC = 2mA
120 V
7V
180 700
Collector to emitter saturation voltage VCE(sat)
IC = 20mA, IB = 2mA
0.6 V
Transition frequency
fT VCB = 5V, IE = –2mA, f = 200MHz
200 MHz
Noise voltage
VCE = 40V, IC = 1mA, GV = 80dB
NV
Rg = 100kΩ, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1

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