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PDF RFT300-CC10G1 Data sheet ( Hoja de datos )
| Número de pieza | RFT300-CC10G1 | |
| Descripción | LOW-FADE SILICON MOSFET DOSIMETER | |
| Fabricantes | REM | |
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REM Data Sheet – RFTDAT-CC10 – Rev W
Type RFT300-CC10G1
REM LOW-FADE SILICON MOSFET DOSIMETER
Two RADFETs, Diode & Capacitor / Lid technology: "glob"
September 2010
A- A'
W=
silicon
chip
8.75 mm
SpaceFET
Copyright
REM 2005
L= A
17
mm
flying lead
6- way
connector;
A' pitch 1.25
mm
1 23
45 6
7
B/S D1 G1 D2 G2 T C
cathode
anode
Copyright REM 2008
REM DOSIMETER SYSTEM:
SpaceFET LAYOUT
file RFTCAR23.PRE Jul 2008 ah-s
Key features
measures ionising radiation doses in the rad to megarad range
applications include
o space and military missions
o high-energy physics experiments
o nuclear power
o radiotherapy
microscopically small sensor volume, measured in cubic micrometres, enables radical new
designs of miniature radiation sensing systems
low-Z epoxy packaging and small silicon chip make a rugged sensor
REM TOT600 chip, mounted on a CC10 carrier is the latest silicon sensor from REM, available in a
variety of encapsulations and sensitivity values. There are several variants but the standard one , normally in stock, is
REM RFT300-CC10G1. This contains a gate oxide of thickness 300nm, has a sensitivity as high as 1.5 mV/cGy and a
package nearly transparent to radiation. It is suitable for many radiation beams and for space.
Designed and Manufactured by
REM Oxford Ltd
64a Acre End St
Eynsham
Oxford
OX29 4PD
England
t.+44 1865 880 050
www.radfet.com
Authorised Sales Representative
Phoenix Semiconductor Limited
46 High Street
Husbands Bosworth
Lutterworth
LE17 6LP
England
t. +44 1858 881 245
www.phoenixsemi.com
REM 2010
1
Technical Notes – by Dr. Andrew Holmes-Sielde (REM Oxford Ltd)
www.radfet.com
1 page  
REM Data Sheet – RFTDAT-CC10 – Rev W
September 2010
TECHNICAL TERMS
RADFET
Radiation-Sensing Field-Effect Transistor microminitaure silicon pMOSFET transistor which acts as an integrating
dosimeter, measuring dose in rad or Gy(Si) by virtue of the field effect caused by space charge trapped in an inorganic
insulator (SiO2). Radiation-induced charge remains stored for many years. The RADFET was invented in 1970 by
Andrew Holmes-Siedle (now sole owner of REM) and his co-worker, the late Waldemar Poch. Details were published
in 1974. The acronym "RADFET" was coined by Robert Hughes in 1986 and is used with permission. The RADFET
has been used for the last 30 years in aerospace industry, and is being used increasingly in medicine, nuclear industry
and science.
Threshold voltage shift, deltaVt
The electrical parameter used to detect the field produced when charge is trapped in the gate oxide of a MOSFET.
Measurement of deltaVt by a reader gives a relative value of dose in a silicon environment (rad or cGy(Si). The VT tracker
measures source to drain signal at a constant I(D), at a set time after switching the bias to the MOSFET.
I-V characteristic, “diff”
REM's automatic DOT tracker measures two points on the drain-current / gate voltage characteristic of the MOSFET. The
difference between the values of V(T) at two currents, being the inverse of the I-V slope, is a measure of device
functionality and a useful "health check".
Minimum Temperature Coefficient (MTC)
At a certain point in the I-V curve, the temperature coefficient (TC) is at a minimum. The value for TOT601B is near 490
mA.
“Drift up”, du
A "border-state instability" which can interfere with accurate measurement of delta Vt. Caused by transien, bias-induced
charging of traps in the oxide-silicon interface. The value of du increases over 10x on irradiation and this can have an
impact on accuracy. However, good tracker design can greatly minimise that impact.
"DOT" Reader System
The DOT "Dosimetry by Oxide Trapping" system designed by REM detects the field produced when space-charge is
trapped in the gate oxide region of the RADFET chip. The electronics measure the shift of threshold voltage. Software then
converts this to a value of dose in rad or cGy(Si). The components of the DOT system, invented by REM in 1970, include
the silicon sensor die or "chip" mounted on application-specific forms of "chip carrier" and probe, using lightweight cables,
battery bias on the MOSFET and electronics to apply bias, digitize voltages, process and transmit the readings by RF link
or thin cable. The DOT electronics is not at present in commercial production but working prototypes exist at REM
Oxford, operation of one is described in Reference 4.
REM is a specialist in developing new RADFET sensor designs and meeting new applications such as very
small probes, large arrays of sensors, medical applications, megarad measurement.
For information on sensor prices, on the DOT reader system and developing areas of RADFET dosimetry see
the REM website.
www.radfet.com
Or Phoenix Semiconductor
www.phoenixsemi.com
REFERENCES
REM 2010
5
Technical Notes – by Dr. Andrew Holmes-Sielde (REM Oxford Ltd)
www.radfet.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RFT300-CC10G1.PDF ] | |
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