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GLT41316-60T 데이터시트 PDF




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부품번호 GLT41316-60T 기능
기능 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
제조업체 ETC
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GLT41316-60T 데이터시트, 핀배열, 회로
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features :
65,536 words by 16 bits organization.
Fast access time and cycle time.
Dual WE Input.
Low power dissipation.
Read-Modify-Write, RAS -Only Refresh,
CAS -Before- RAS Refresh, Hidden
Refresh and Test Mode Capability.
256 refresh cycles per 4ms.
Available in 40-pin 400 mil SOJ,and 40/44
pin TSOP (II).
Single 5.0V±10% Power Supply.
All inputs and Outputs are TTL
compatible. Fast Page Mode operation.
Description :
The GLT41316 is a 65,536 x 16 bit high-
performance CMOS dynamic random access
memory. The GLT41316 offers Fast Page
mode ,and has both BYTE WRITE and
WORD WRITE access cycles via two WE
pins. The GLT41316 has symmetric address
and accepts 256-cycle refresh in 4ms
interval.
All inputs are TTL compatible. Fast
Page Mode operation allows random access
up to 256x16 bits, within a page, with cycle
times as short as 18ns.
The GLT41316 is best suited for
graphics, and DSP applications requiring
high performance memories.
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC)
Max. Column Address Access Time, (tAA)
Min. Fast Page Mode Cycle Time, (tPC)
Min. Read/Write Cycle Time, (tRC)
Max. CAS Access Time (tCAC)
30
30 ns
15 ns
18 ns
65 ns
10 ns
35
35 ns
18 ns
21 ns
70 ns
11 ns
40
40 ns
20 ns
23 ns
75 ns
12 ns
45
45 ns
22 ns
25 ns
80 ns
12 ns
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-1-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.




GLT41316-60T pdf, 반도체, 판매, 대치품
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Truth Table: GLT41316
Function
Standby
Read: Word
RAS CAS UW LW
H HX X
L LH
X
H
OE ADDRESS
DQs
X High-Z
L ROW/COL Data Out
Note
s
Write: Word(Early Write)
L
L L L X ROW/COL Data-In
Write: Lower Byte (Early)
Write: Upper Byte (Early)
Read Write
L
L
L
L H L X ROW/COL Lower Byte,Data-In
Upper Byte,High-Z
L L H X ROW/COL Lower Byte,High-Z
Upper Byte,Data-In
L HL HL LH ROW/COL Data-Out,Data-In 1,2
Fast-Page- 1st Cycle
L HL H H L ROW/COL Data-Out
1
Mode Read 2nd Cycle
L HL
HL
COL Data-Out
1
Fast-Page- 1st Cycle
L HL L L X ROW/COL Data-In
Mode Write 2nd Cycle L HL L L X
COL Data-In
2
2
Fast-Page- 1st Cycle
Mode Read-
Write
2nd Cycle
L HL HL HL LH ROW/COL Data-Out,Data-In 1,2
L HL HL HL LH COL Data-Out,Data-In 1,2
Hidden
Refresh
Read
Write
RAS -Only Refresh
CBR Refresh
LHL L H H L ROW/COL Data-Out
LHL L L L X ROW/COL Data-In
L H X X X ROW High-Z
HL
L
X
X
X
High-Z
1
2,3
Notes:
1. These READ cycles are always WORD READ cycles .
2. These WRITE cycles may also be BYTE READ cycles (either UW or LW active).
3. EARLY WRITE only.
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-4-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.

4페이지










GLT41316-60T 전자부품, 판매, 대치품
G-LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Parameter
WE Lead Time Referenced to RAS
WE Lead Time Referenced to CAS
Data-In Setup Time
Data-In Hold Time
Data Hold Time Referenced to RAS
tRAC = 30 ns tRAC = 35 ns tRAC = 40 ns tRAC = 45 ns
Symbo MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. Unit Notes
l
tRWL 10 - 11 - 12 - 12 - ns
tCWL 10 - 11 - 12 - 12 - ns
tDS 0 - 0 - 0 - 0 - ns 11
tDH 7 - 7 - 8 - 8 - ns 11
tDHR 27 - 31 - 36 - 41 - ns 6
WE Setup Time
tWCS
0 - 0 - 0 - 0 - ns 5
RAS to WE Delay Time
tRWD
47 -
58 -
63 - 68 - ns 5
CAS to WE Delay Time
tCWD
24 -
29 -
30 - 30 - ns 5
Column Address to WE Delay Time
tAWD
29 - 36 - 38 - 40 - ns 5
CAS Setup Time( CAS before RAS
Refresh)
tCSR
5 - 5 - 5 - 5 - ns
CAS Hold Time( CAS before RAS tCHR 10 - 10 - 10 - 10 - ns
Refresh)
RAS to CAS Precharge Time
tRPC 5 - 5 - 5 - 5 - ns
CAS Precharge Time(CBR Counter Test tCPT
Cycle)
20 - 20 - 20 - 20 - ns
Access Time from CAS Precharge
tCPA
- 18 - 21 - 23 - 25 ns 3
Fast Page mode Read/Write Cycle Time tPC
18 - 21 - 23 - 25 - ns
Fast Page mode Read Modify Write
Cycle Time
tPRWC
48
-
60
-
63
-
65
- ns
CAS Precharge Time(Fast Page mode) tCP
5.5 - 6 - 7 - 7 - ns
RAS Pulse Width(Fast Page mode)
tRASP
30 100k 35 100k 40 100K 45 100K ns
RAS Hold Time from CAS Precharge tRHCP 25 - 25 - 25 - 30 - ns
Access Time from OE
tOEA - 10 - 11 - 12 - 12 ns
OE to Delay Time
tOED
Output Buffer Turn-off Delay Time from tOEZ
8 - 8 - 8 - 8 - ns
3 8 3 8 3 8 3 8 ns 7
OE
OE Hold Time
tOEH 6 - 6 - 7 - 7 - ns
WE Hold Time(Hidden Refresh Cycle) tWHR
Refresh Time(256cycles)
tREF
15 - 15 - 15 - 15 - ns
- 4 - 4 - 4 - 4 ms
G-Link Technology Corporation
2701Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-7-
G-Link Technology Corporation, Taiwan
2F, No.12, R&D Rd. II, Science-Based Industrial Park,
Hsin Chu, Taiwan, R.O.C.

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