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PDF AF9902M Data sheet ( Hoja de datos )
| Número de pieza | AF9902M | |
| Descripción | 2N and 2P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Anachip | |
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AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
Features
- Simple Drive Requirement
- Low On-Resistance
- Full Bridge Application on LCD Monitor Inverter
- Pb Free Plating Product
Product Summary
CH BVDSS (V) RDS(ON) (mΩ)
N 30
40
P -30
70
ID (A)
4.3
-3.3
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Pin Assignments
Pin Descriptions
N1G 1
N1D/P1D 2
N1S/N2S 3
N2G 4
SO-8
8 P1G
7 P1S/P2S
6 N2D/P2D
5 P2G
Ordering information
Pin Name
N1G
N1D/P1D
N1S/N2S
N2G
P2G
N2D/P2D
P1S/P2S
P1G
Description
Gate (NMOS1)
Drain(NMOS1) / Drain(PMOS1)
Source(NMOS1) / Source(NMOS2)
Gate (NMOS2)
Gate (PMOS2)
Drain(NMOS2) / Drain(PMOS2)
Source(PMOS1) / Source(PMOS2)
Gate (PMOS1)
A X 9902M X X
Feature
F :MOSFET
PN
Block Diagram
Package
S: SO-8
Packing
Blank : Tube or Bulk
A : Tape & Reel
P1S
P1G
P1N1D
N1G
N1S
P2S
P2G
P2N2D
N2G
N2S
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005
1/8
1 page  
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
Typical Performance Characteristics (N-Channel) (Continued)
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 22, 2005
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AF9902M.PDF ] | |
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