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Datasheet GLT5160L16-7FJ Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1GLT5160L16-7FJ16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM

GLT5160L16 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM ADVANCED FEATURES u Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address) u CAS lat
ETC
ETC		data


GLT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1GLT4101664K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT

G -LINK a t Featuresa : D . ∗ w 65,536 words by 16 bits organization. ∗ w Fast access time and cycle time. w ∗ Dual CAS Input. ∗ ∗ Low power dissipation. Read-Modify-Write, RAS -Only Refresh, CAS -Before- RAS Refresh, Hidden Refresh and Test Mode Capability. ∗ 256 refresh cycles per 4ms
G-Link Technology
G-Link Technology		cmos
2GLT4111664k x 16 CMOS Dynamic RAM with Fast Page Mode

GLT41116 64k x 16 CMOS Dynamic RAM with Fast Page Mode FEATURES x 65,536 words by 16 bits organization. x Fast access time and cycle time. x Dual CAS input. x Low power dissipation. x Read-Modify-Write, RAS-Only Refresh, CAS-before-RAS Refresh, Hidden Refresh and Test Mode Capability. x 256 refresh
ETC
ETC		cmos
3GLT4131664K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Features : ∗ ∗ ∗ ∗ ∗ 65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh, Description : The GLT41316 is a 65,536
ETC
ETC		cmos
4GLT41316-12FA64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Features : ∗ ∗ ∗ ∗ ∗ 65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh, Description : The GLT41316 is a 65,536
ETC
ETC		cmos
5GLT41316-12FB64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Features : ∗ ∗ ∗ ∗ ∗ 65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh, Description : The GLT41316 is a 65,536
ETC
ETC		cmos
6GLT41316-12FC64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Features : ∗ ∗ ∗ ∗ ∗ 65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh, Description : The GLT41316 is a 65,536
ETC
ETC		cmos
7GLT41316-12J364K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

G -LINK GLT41316 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE June 1998 (Rev 2) Features : ∗ ∗ ∗ ∗ ∗ 65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh, Description : The GLT41316 is a 65,536
ETC
ETC		cmos



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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