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Datasheet GLT5160L16-7TC Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GLT5160L16-7TC | 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM GLT5160L16
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
ADVANCED
FEATURES
u Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address) u CAS lat | ETC | data |
GLT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GLT41016 | 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT G -LINK
a t Featuresa : D . ∗ w 65,536 words by 16 bits organization. ∗ w Fast access time and cycle time. w ∗ Dual CAS Input.
∗ ∗
Low power dissipation. Read-Modify-Write, RAS -Only Refresh, CAS -Before- RAS Refresh, Hidden Refresh and Test Mode Capability. ∗ 256 refresh cycles per 4ms G-Link Technology cmos | | |
2 | GLT41116 | 64k x 16 CMOS Dynamic RAM with Fast Page Mode GLT41116
64k x 16 CMOS Dynamic RAM with Fast Page Mode
FEATURES
x 65,536 words by 16 bits organization. x Fast access time and cycle time. x Dual CAS input. x Low power dissipation. x Read-Modify-Write, RAS-Only Refresh, CAS-before-RAS Refresh, Hidden Refresh and Test Mode Capability. x 256 refresh ETC cmos | | |
3 | GLT41316 | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 ETC cmos | | |
4 | GLT41316-12FA | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 ETC cmos | | |
5 | GLT41316-12FB | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 ETC cmos | | |
6 | GLT41316-12FC | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 ETC cmos | | |
7 | GLT41316-12J3 | 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE G -LINK
GLT41316
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
June 1998 (Rev 2)
Features : ∗ ∗ ∗ ∗ ∗
65,536 words by 16 bits organization. Fast access time and cycle time. Dual WE Input. Low power dissipation. Read-Modify-Write, RAS -Only Refresh,
Description :
The GLT41316 is a 65,536 ETC cmos | |
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Número de pieza | Descripción | Fabricantes | |
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