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PDF AUIRLR3114Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRLR3114Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 96381
AUIRLR3114Z
AUIRLU3114Z
HEXFET® Power MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
D VDSS
RDS(on) max @ 10V
40V
4.9mΩ
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Logic Level
G
max @ 4.5V
ID (Silicon Limited)
6.5mΩ
k130A
l Lead-Free, RoHS Compliant
l Automotive Qualified *
S ID (Package Limited)
42A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
D
S
G
D-Pak
AUIRLR3114Z
S
D
G
I-Pak
AUIRLU3114Z
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
Max.
130 k
89 k
42
500
140
0.95
±16
130
260
See Fig.12a, 12b, 15, 16
-55 to + 175
300(1.6mm from case)
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/22/11
1 page  
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRLR/U3114Z
6.0
ID= 42A
5.0 VDS= 32V
VDS= 20V
4.0 VDS= 8.0V
3.0
2.0
1.0
0.0
0
10 20 30 40
QG, Total Gate Charge (nC)
50
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100 TJ = 175°C
10 TJ = 25°C
1.0
0.0
VGS = 0V
0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
3.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
100
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
DC
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com
5
5 Page 
AUIRLR/U3114Z
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
Part Number
IR Logo
AULU3114Z
YWWA
XX or XX
Lot Code
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet AUIRLR3114Z.PDF ] | |
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