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FGH20N60SFD 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FGH20N60SFD은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 FGH20N60SFD 자료 제공

부품번호 FGH20N60SFD 기능
기능 20A Field Stop IGBT
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FGH20N60SFD 데이터시트, 핀배열, 회로
FGH20N60SFD
600V, 20A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.2V @ IC = 20A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
September 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
± 20
40
20
60
165
66
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.76
2.51
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH20N60SFD Rev. A
1
www.fairchildsemi.com




FGH20N60SFD pdf, 반도체, 판매, 대치품
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
60
TC = 25oC
20V
15V
12V
10V
40
Figure 2. Typical Output Characteristics
60
TC = 125oC
20V 12V
15V 10V
40
20
VGE = 8V
0
0.0 1.5 3.0 4.5
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
60
Common Emitter
VGE = 15V
TC = 25oC
40 TC = 125oC
6.0
20 VGE = 8V
0
0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
60
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
40
20 20
0
012345
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
Common Emitter
VGE = 15V
40A
3
20A
2
IC = 10A
1
25 50 75 100 125
Collector-Emitter Case Temperature, TC [oC]
0
4 6 8 10 12
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = -40oC
16
12
8
40A
4
20A
IC = 10A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
FGH20N60SFD Rev. A
4
www.fairchildsemi.com

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FGH20N60SFD 전자부품, 판매, 대치품
Typical Performance Characteristics
Figure 19. Forward Characteristics
40
TJ = 125oC
10 TJ = 75oC
TJ = 25oC
1
Figure 20. Reverse Current
100
10
1
0.1
0.01
TC = 125oC
TC = 75oC
TC = 25oC
0.1
0
123
Forward Voltage, VF [V]
Figure 21. Stored Charge
60
4
1E-3
0
100 200 300 400 500
Reverse Voltage, VR [V]
600
Figure 22. Reverse Recovery Time
60
50 50
200A/µs
di/dt = 100A/µs
40 40
200A/µs
30
di/dt = 100A/µs
30
20 20
10
0 5 10 15 20
Forward Current, IF [A]
10
0 5 10 15 20
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
single pulse
1E-3
1E-5
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
1
10
FGH20N60SFD Rev. A
7
www.fairchildsemi.com

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