|
|
|
부품번호 | P36NF06 기능 |
|
|
기능 | STP36NF06 | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 14 페이지수
STP36NF06
STP36NF06FP
N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP
STripFET™ II Power MOSFET
General features
Type
STP36NF06
STP36NF06FP
VDSS
60V
60V
RDS(on)
<0.040Ω
<0.040Ω
ID
30A
18A(1)
1. Current limited by package
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STP36NF06
STP36NF06FP
Marking
P36NF06
P36NF06
Package
TO-220
TO-220FP
Packaging
Tube
Tube
February 2007
Rev 6
1/14
www.st.com
14
Electrical characteristics
2 Electrical characteristics
STP36NF06 - STP36NF06FP
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250µA, VGS =0
60
V
VDS = max ratings
VDS = max ratings,
TC = 125°C
1 µA
10 µA
VGS = ± 20V
±100 nA
VDS = VGS, ID = 250µA
2
4V
VGS = 10V, ID = 15A
0.032 0.040 Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 25V, ID = 15A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 18A
RG = 4.7Ω VGS = 10V
(see Figure 15)
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 30V, ID = 18A,
VGS = 10V
(see Figure 16)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
12 S
690 pF
170 pF
68 pF
10 ns
40 ns
27 ns
9 ns
23 31 nC
6 nC
9 nC
4/14
4페이지 STP36NF06 - STP36NF06FP
Figure 7. Transconductance
Electrical characteristics
Figure 8. Static drain-source on resistance
Figure 9. Gate charge vs. gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs.
vs. temperature
temperature
7/14
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ P36NF06.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
P36NF06 | STP36NF06 | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |