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PDF TTW3C85N16 Data sheet ( Hoja de datos )
| Número de pieza | TTW3C85N16 | |
| Descripción | Phase Control Thyristor Module | |
| Fabricantes | eupec | |
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Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 85 N 16
(ISOPACK)
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = - 40°C...Tvj max
repetitive peak forward off-state and reverse voltages
VDRM, VRRM
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Tvj = - 40°C...Tvj max
VDSM
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = + 25°C...Tvj max
VRSM
Durchlaßstrom-Grenzeffektivwert (pro Element)
RMS on-state current (per chip)
ITRMSM
Effektivstrom (pro Phase)
RMS current (per arm)
TC = 85°C
TC = 72°C
TA = 45°C, KM 11
TA = 45°C, KM 33
TA = 35°C, KM 14 (VL = 45l/s)
TA = 35°C, KM 33 (VL = 90l/s)
IRMS
Stoßstrom-Grenzwert
surge current
Tvj = 25°C, tp = 10ms
Tvj = Tvj max, tp = 10ms
ITSM
Grenzlastintegral
I²t-value
Tvj = 25°C, tp = 10ms
Tvj = Tvj max, tp = 10ms
I²t
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 747-6
(di/dt)cr
f = 50Hz, iGM = 0,6A, diG/dt = 0,6A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = Tvj max, vD = 0,67 VDRM
8. Kennbuchstabe / 8th letter F
(dv/dt)cr
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
Tvj = Tvj max, iT = 100A
vT
Tvj = Tvj max
V(T0)
Tvj =Tvj max
rT
Tvj = 25°C, vD = 6V
IGT
Tvj = 25°C, vD = 6V
VGT
Tvj = Tvj max, vD = 6V
Tvj = Tvj max, vD = 0,5 VDRM
Tvj = Tvj max, vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 6V, RA = 5Ω
IH
Tvj = 25°C, vD = 6V, RGK ≥ 20Ω
IL
iGM = 0,6A, diG/dt = 0,6A/µs, t g = 10µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
iD, iR
DIN IEC 747-6
tgd
Tvj = 25°C, iGM = 0,6A, diG/dt = 0,6A/µs
N W3
1600 V
1600 V
1700 V
75 A
85
106
35
49
83
96
720
620
2600
1920
120
A
A
A
A
A
A
A
A
A²s
A²s
A/µs
1000 V/µs
max. 1,64 V
0,95 V
5,5 mΩ
max. 150 mA
max. 2,5 V
max. 5,0 mA
max. 2,5 mA
max. 0,2 V
max. 200 mA
max. 600 mA
max.
8 mA
max. 1,2 µs
BIP PPE 4 rev. 2
25. Okt 05
A 10/05
Seite/page 1(9)
1 page  
Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT W3C 85 N 16
(ISOPACK)
N
W3
0,80
0,70
0,60
180° sin
DC
0,50
0,40
0,30
0,20
0,10
0,00
0,001
0,01
0,1
t [s]
1
10
Transienter innerer Wärmewiderstand je Zweig / Transient thermal impedance per arm Z thJC = f(t)
Parameter: Stromflußwinkel / Current conduction angle Θ
BIP PPE 4 rev. 2
25. Okt 05
Seite/page 5(9)
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TTW3C85N16.PDF ] | |
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