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부품번호 | PESD3V3L5UF 기능 |
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기능 | Low capacitance unidirectional fivefold ESD protection diode arrays | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 17 페이지수
PESDxL5UF; PESDxL5UV;
PESDxL5UY
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 02 — 8 January 2008
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
five unidirectional signal lines from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD3V3L5UF
SOT886
PESD5V0L5UF
SOT886
PESD3V3L5UV
SOT666
PESD5V0L5UV
SOT666
PESD3V3L5UY
SOT363
PESD5V0L5UY
SOT363
JEITA
-
-
-
-
SC-88
SC-88
JEDEC
MO-252
MO-252
-
-
-
-
Package configuration
leadless ultra small
leadless ultra small
ultra small and flat lead
ultra small and flat lead
very small
very small
1.2 Features
I ESD protection of up to five lines
I Low diode capacitance
I Max. peak pulse power: PPP = 25 W
I Low clamping voltage: VCL = 12 V
I Ultra low leakage current: IRM = 5 nA
I ESD protection up to 20 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 2.5 A
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
NXP Semiconductors
PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max Unit
Per diode
PPP
IPP
Per device
Tj
Tamb
Tstg
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
tp = 8/20 µs
tp = 8/20 µs
[1][2] -
[1][2] -
-
−65
−65
25 W
2.5 A
150
+150
+150
°C
°C
°C
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Table 7. ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VESD
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Min Max Unit
[1][2] -
-
20 kV
10 kV
Table 8. ESD standards compliance
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESDXL5UF_V_Y_2
Product data sheet
Rev. 02 — 8 January 2008
© NXP B.V. 2008. All rights reserved.
4 of 17
4페이지 NXP Semiconductors
PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
102
PPP
(W)
006aab139
1.2
PPP
PPP(25°C)
1.0
0.8
006aab140
10 0.6
0.4
0.2
1
1 10 102 103 104
tp (µs)
Tamb = 25 °C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values
0
0 50 100 150
Tj (°C)
Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical values
25
Cd
(pF)
20
15
10
006aab141
(1)
(2)
10
IR
IR(25°C)
1
006aab142
5
0
012345
VR (V)
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3L5UF; PESD3V3L5UV; PESD3V3L5UY
(2) PESD5V0L5UF; PESD5V0L5UV; PESD5V0L5UY
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
10−1
−75
−25
25
75 125 175
Tj (°C)
Fig 6. Relative variation of reverse current as a
function of junction temperature; typical values
PESDXL5UF_V_Y_2
Product data sheet
Rev. 02 — 8 January 2008
© NXP B.V. 2008. All rights reserved.
7 of 17
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