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PDF CS220-8D Data sheet ( Hoja de datos )
| Número de pieza | CS220-8D | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Central Semiconductor | |
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CS220-8B
CS220-8D
CS220-8M
CS220-8N
SILICON CONTROLLED RECTIFIERS
8.0 AMP, 200 THRU 800 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS220-8B series
types are epoxy molded SCRs designed for sensing
circuit and control system applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
VDRM, VRRM
RMS On-State Current (TC=90°C)
IT(RMS)
Peak One Cycle Surge Current, t=10ms
ITSM
I2t Value for Fusing, t=10ms
I2t
Peak Gate Power Dissipation, tp=10μs
Average Gate Power Dissipation
Peak Forward Gate Current, tp=10μs
Peak Forward Gate Voltage, tp=10μs
Peak Reverse Gate Voltage, tp=10μs
Critical Rate of Rise of On-State Current
PGM
PG(AV)
IFGM
VFGM
VRGM
di/dt
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Thermal Resistance
TJ
Tstg
ΘJA
ΘJC
-8B
200
CS220
-8D -8M
400 600
8.0
60
18
40
1.0
4.0
16
5.0
50
-40 to +125
-40 to +150
60
2.5
-8N
800
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IDRM, IRRM Rated VDRM, VRRM
IDRM, IRRM Rated VDRM, VRRM, TC=125°C
IGT VD=12V, RL=10Ω
3.0
IH IT=100mA
7.3
VGT
VD=12V, RL=10Ω
0.9
VTM
ITM=16A, tp=380μs
1.3
dv/dt
VD=⅔Rated VDRM, TC=125°C
200
MAX
10
2.0
15
20
1.5
1.8
UNITS
V
A
A
A2s
W
W
A
V
V
A/μs
°C
°C
°C/W
°C/W
UNITS
μA
mA
mA
mA
V
V
V/μs
R4 (24-October 2013)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CS220-8D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CS220-8B | SILICON CONTROLLED RECTIFIERS | Central Semiconductor |
| CS220-8D | SILICON CONTROLLED RECTIFIERS | Central Semiconductor |
| CS220-8M | SILICON CONTROLLED RECTIFIERS | Central Semiconductor |
| CS220-8N | SILICON CONTROLLED RECTIFIERS | Central Semiconductor |
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