VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Bridge (Power Modules), 45 A to 100 A
MT...PA
MT...PB
PRODUCT SUMMARY
IO
VRRM
Package
Circuit
45 A to 100 A
1400 V to 1600 V
MT...PA, MT...PB
Three phase bridge
FEATURES
• Low VF
• Low profile package
• Direct mounting to heatsink
• Flat pin/round pin versions with PCB solderable
terminals
• Low junction to case thermal resistance
• 3500 VRMS insulation voltage
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Power conversion machines
• Welding
• UPS
• SMPS
• Motor drives
• General purpose and heavy duty application
DESCRIPTION
A range of extremely compact three-phase rectifier bridges
offering efficient and reliable operation. The low profile
package has been specifically conceived to maximize space
saving and optimize the electrical layout of the application
specific power supplies.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS
VALUES
40MT
IO
IFSM
TC
50 Hz
60 Hz
45
100
270
280
50 Hz
I2t
60 Hz
I2t
365
325
3650
VRRM
TStg
TJ
Range
VALUES
70MT
75
80
380
398
724
660
7240
1400 to 1600
- 40 to 125
- 40 to 150
VALUES
100MT
100
80
450
470
1013
920
10 130
UNITS
A
°C
A
A2s
A2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
REVERSE VOLTAGE
V
VS-40MT140P, VS-70MT140P,
VS-100MT140P
VS-40MT160P, VS-70MT160P,
VS-100MT160P
140
160
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
1400
1600
VRSM, MAXIMUM
IRRM MAXIMUM AT
NON-REPETITIVE PEAK
TJ = 150 °C
V mA
1500
1700
5
Revision: 30-Oct-13
1 Document Number: 94538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT1.0P.PbF, VS-70MT1.0P.PbF, VS-100MT1.0P.PbF Series
www.vishay.com
Vishay Semiconductors
160
150
140
130
120
110
100
90
80
70
60
0
70MT...P
RthJC (DC) = 0.23 K/W
Per Module
120˚
(Rect)
10 20 30 40 50 60 70 80
Total Output Current (A)
Fig. 6 - Current Rating Characteristics
350
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
300 @ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
250
200
150 70MT...P
Per Junction
100
1
10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 8 - Maximum Non-Repetitive Surge Current
1000
100
Tj = 25˚C
Tj = 150˚C
10
70MT...P
1
012345
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
400 Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
350 Of Conduction May Not Be Maintained.
Initial T j = 150˚C
300 No Voltage Reapplied
Rated V rrm Reapplied
250
200
150
100 70MT...P
Per Junction
50
0.01
0.1
Pulse Train Duration(s)
1
Fig. 9 - Maximum Non-Repetitive Surge Current
300
70MT...P
250 Tj = 150˚C
200
150
100
120˚
(Rect)
0.2 K/W
00.4.3KK//WW
0.5 K/W
1 K/W
50
0
0 20 40 60
Total Output Current (A)
800 30 60 90 120 150
Maximum Allowable Ambient Temperature (°C)
Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink)
Revision: 30-Oct-13
4 Document Number: 94538
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000