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부품번호 | FGW50N60H 기능 |
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기능 | Discrete IGBT | ||
제조업체 | Fuji Electric | ||
로고 | |||
전체 6 페이지수
http://www.fujielectric.com/products/semiconductor/
FGW50N60H
Discrete IGBT (High-Speed V series)
600V / 50A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Discrete IGBT
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Symbols
VCES
VGES
IC@25
IC@100
ICP
-
Short Circuit Withstand Time tSC
Maximum Power Dissipation
PD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics
600
±20
95
50
150
150
5
360
-40~+175
-55~+175
Units
Remarks
V
V
A TC=25°C, Tj=150°C
A TC=100°C, Tj=150°C
A Note *1
A VCE≤600V, Tj≤175°C
μs
VCC≤300V, VGE=12V
Tj≤150°C
W TC=25°C
°C
°C
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Thermal resistance
Symbols
V(BR)CES
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Conditions
IC = 250μA, VGE = 0V
VCE = 600V, VGE = 0V
Tj=25°C
Tj=175°C
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 50mA
VGE = +15V, IC = 50A
Tj=25°C
Tj=175°C
VCE=25V
VGE=0V
f=1MHz
VCC = 400V
IC = 50A
VGE = 15V
Tj = 25°C
VCC = 400V
IC = 50A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW25S60L) reverse recovery.
Tj = 175°C
VCC = 400V
IC = 50A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD
(FDRW25S60L) reverse recovery.
Items
Thermal Resistance, Junction-Ambient
Thermal Resistance Junction to Case
Symbols
Rth(j-a)
Rth(j-c)
Conditions
Equivalent circuit
Collector
Gate
Emitter
Characteristics
min. typ. max.
600 -
-
- - 250
- - 10
- - 200
4.0 5.0 6.0
- 1.50 1.95
- 1.80 -
- 4320 -
- 210 -
- 160 -
- 305 -
- 35 -
- 75 -
- 310 -
- 60 -
- 1.4 -
- 1.7 -
- 40 -
- 85 -
- 335 -
- 72 -
- 2.4 -
- 2.2 -
Unit
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
Characteristics
min. typ. max.
- - 50
- - 0.417
Unit
°C/W
1
FGW50N60H
Graph.13
Reverse biased Safe Operating Area
Tj≤175ºC, VGE=+15V/0V, RG=10Ω
300
200
100
0
0 200 400 600 800
Collector-Emitter voltage : VCE [V]
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Transient thermal resistance of IGBT
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
t [sec]
100
4
4페이지 | |||
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당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FGW50N60H | Power Devices (IGBT) | ETC |
FGW50N60H | Discrete IGBT | Fuji Electric |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |