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FGW15N120HD 데이터시트 PDF




Fuji Electric에서 제조한 전자 부품 FGW15N120HD은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 FGW15N120HD 자료 제공

부품번호 FGW15N120HD 기능
기능 Discrete IGBT
제조업체 Fuji Electric
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FGW15N120HD 데이터시트, 핀배열, 회로
http://www.fujielectric.com/products/semiconductor/
FGW15N120HD
Discrete IGBT
Discrete IGBT (High-Speed V series)
1200V / 15A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Equivalent circuit
Items
Collector-Emitter Voltage
Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Short Circuit Withstand Time
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbols
VCES
VGES
IC@25
IC@100
ICP
-
IF@25
IF@100
IFP
tSC
PD_IGBT
PD_FWD
Tj
Tstg
Characteristics
1200
±20
31
15
45
45
22
12
45
5
155
75
-40 ~ +175
-55 ~ +175
Units
Remarks
V
V
A TC=25°C,Tj=150°C
A TC=100°C,Tj=150°C
A Note *1
A VCE≤1200V,Tj≤175°C
A
A
A Note *1
µs
VCC≤600V,VGE=12V
Tj≤150°C
W
TC=25°C
TC=25°C
°C
°C
Gate
Collector
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Symbols
V(BR)CES
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Conditions
IC = 50μA, VGE = 0V
VCE = 1200V, VGE = 0V
Tj=25°C
Tj=175°C
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 15mA
VGE = +15V, IC = 15A
Tj=25°C
Tj=175°C
VCE=25V
VGE=0V
f=1MHz
VCC = 600V
IC = 15A
VGE = 15V
Tj = 25°C
VCC = 600V
IC = 15A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj = 175°C
VCC = 600V
IC = 15A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Characteristics
min. typ. max.
1200
-
-
- - 250
- -2
- - 200
4.0 5.0 6.0
- 1.8 2.34
- 2.3 -
- 1365 -
- 50 -
- 45 -
- 140 -
- 20 -
- 15 -
- 180 -
- 35 -
- 0.6 -
- 0.8 -
- 25 -
- 17 -
- 220 -
- 60 -
- 1.2 -
- 1.2 -
Units
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
1




FGW15N120HD pdf, 반도체, 판매, 대치품
FGW15N120HD
Graph.7
Typical Capacitance
VGE=0V,f=1MHz,Tj=25°C
104
103
Cies
102 Coes
Cres
101
100
10-2
10-1 100
VCE [V]
101
Graph.9
Typical switching time vs. IC
Tj=175°C,VCC=600V,L=500µH
VGE=15V,RG=1
1000
100
10
td(off)
tf
td(on)
tr
1
0 5 10 15 20 25 30
Collector Current IC [A]
Graph.11
Typical switching losses vs. IC
Tj=175°C,VCC=600V,L=500µH
VGE=15V,RG=1
4
35
3
2
Eon
1 Eoff
0
0 5 10 15 20 25 30 35
Collector Current IC [A]
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8
Typical Gate Charge
VCC=600V,IC=15A,Tj=25°C
20
15
VCC=600V
10
5
0B
0 50 100 150 200 250 300
QG [nC]
Graph.10
Typical switching time vs. RG
Tj=175°C,VCC=600V,IC=15A,L=500µH
VGE=15V
1000
100
10
td(off)
tf
td(on)
tr
1
0 10 20 30 40 50 60
Gate Resistor RG [Ω]
Graph.12
Typical switching losses vs. RG
Tj=175°C,VCC=600V,IC=15A,L=500µH
VGE=15V
4
3
2
Eon
1 Eoff
0
0 10 20 30 40 50 60
Gate Resistor RG [Ω]
4

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FGW15N120HD 전자부품, 판매, 대치품
FGW15N120HD
Outline Drawings, mm
Outview : TO-247 Package
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
①② ③
①② ③
CONNECTION
GATE
COLLECTOR
EMITTER
DIMENSIONS ARE IN MILLIMETERS.
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관련 데이터시트

부품번호상세설명 및 기능제조사
FGW15N120H

Power Devices (IGBT)

ETC
ETC
FGW15N120H

Discrete IGBT

Fuji Electric
Fuji Electric

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