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PDF FGW25N120VD Data sheet ( Hoja de datos )
| Número de pieza | FGW25N120VD | |
| Descripción | Discrete IGBT | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
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http://www.fujielectric.com/products/semiconductor/
FGW25N120VD
Discrete IGBT
Discrete IGBT (High-Speed V series)
1200V / 25A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Inverter for Motor drive
AC and DC Servo drive amplifier
Uninterruptible power supply
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at TC=25°C unless otherwise specified)
Equivalent circuit
Items
Collector-Emitter voltage
Gate-Emitter voltage
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Diode Forward Current
Diode Pulsed Current
Symbols
VCES
VGES
IC@25
IC@100
ICP
-
IF@25
IF@100
IFP
Short Circuit Withstand Time tSC
IGBT Max. Power Dissipation
PD_IGBT
FWD Max. Power Dissipation
PD_FWD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics
1200
±20
48
25
50
50
42
25
50
10
260
155
-40~+175
-55~+175
Units
Remarks
V
V
A TC=25°C, Tj=150°C
A TC=100°C, Tj=150°C
A Note *1
A VCE≤1200V, Tj≤175°C
A
A
A Note *1
μs
VCC≤640V, VGE=15V
Tj≤150°C
W
TC=25°C
TC=25°C
°C
°C
Gate
Collector
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Forward Voltage Drop
Diode Reverse Recovery Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbols
V(BR)CES
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
VF
trr1
trr2
Qrr
Conditions
IC = 50μA, VGE = 0V
VCE = 1200V, VGE = 0V
Tj=25°C
Tj=175°C
VCE = 0V, VGE = ±20V
VCE = +20V, IC = 25mA
VGE = +15V, IC = 25A
Tj=25°C
Tj=175°C
VCE=25V
VGE=0V
f=1MHz
VCC = 600V
IC = 25A
VGE = 15V
Tj = 25°C
VCC = 600V
IC = 25A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
Tj = 175°C
VCC = 600V
IC = 25A
VGE = 15V
RG = 10Ω
L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
IF=25A
Tj=25°C
Tj=175°C
VCC=30V
IF = 2.5A
-di/dt=200A/µs
VCC=600V
IF=25A
-diF/dt=200A/µs
Tj=25°C
Characteristics
min. typ. max.
1200
-
-
- - 250
- -2
- - 200
6.0 6.5 7.0
- 1.85 2.4
- 2.4 -
- 1750 -
- 105 -
- 80 -
- 235 -
- 32 -
- 45 -
- 235 -
- 50 -
- 2.2 -
- 1.4 -
- 35 -
- 50 -
- 300 -
- 80 -
- 3.5 -
- 2.4 -
- 1.7 2.21
- 1.8 -
- 72 94
- 0.30 -
- 1.20 -
Unit
V
µA
mA
nA
V
V
pF
nC
ns
mJ
ns
mJ
V
V
ns
µs
µC
1
1 page  
FGW25N120VD
Graph.13
FWD Forward voltage drop (VF-IF)
50
40
Tj=25℃
Tj=175℃
30
20
10
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF [V]
Graph.15
Typical reverse recovery loss vs. IF
Tj=175°C,VCC=600V,L=500µH
VGE=15V,RG=10Ω
4
3
2
1
0
0 10 20 30 40 50
IF [A]
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Typical reverse recovery characteristics vs. IF
Tj=175°C, VCC=600V, L=500µH,
VGE=15V,RG=10Ω
800 8
600 trr
Qrr
400
6
4
200 2
00
0 10 20 30 40 50
IF [A]
Graph.16
Reverse biased Safe Operating Area
Tj≤175°C,VGE=+15V/0V,RG=10Ω
100
80
60
40
20
0
0
200
400
600
800
1000
1200
1400
Collector-Emitter voltage : VCE [V]
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGW25N120VD.PDF ] | |
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