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부품번호 | IRFI4212H-117P 기능 |
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기능 | Digital Audio MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 6 페이지수
DIGITAL AUDIO MOSFET
PD - 97249A
IRFI4212H-117P
Features
Integrated half-bridge package
Reduces the part count by half
Facilitates better PCB layout
Key parameters optimized for Class-D
audio amplifier applications
Low RDS(ON) for improved efficiency
Low Qg and Qsw for better THD and
improved efficiency
Low Qrr for better THD and lower EMI
Can delivery up to 150W per channel into
4Ω load in half-bridge configuration
amplifier
Lead-free package
Key Parameters g
VDS 100
RDS(ON) typ. @ 10V
58
Qg typ.
12
Qsw typ.
6.9
RG(int) typ.
3.4
TJ max
150
V
m:
nC
nC
Ω
°C
TO-220 Full-Pak 5 PIN
Description
G1, G2
Gate
D1, D2
Drain
S1, S2
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings g
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation f
Power Dissipation f
Max.
100
±20
11
6.8
44
18
7.0
Units
V
A
W
EAS
TJ
TSTG
Linear Derating Factor
Single Pulse Avalanche Energyd
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
0.14
41
-55 to + 150
300
W/°C
mJ
°C
Mounting torque, 6-32 or M3 screw
10lbxin (1.1Nxm)
Thermal Resistance g
Parameter
RθJC
Junction-to-Case f
RθJA Junction-to-Ambient (free air)
Typ.
–––
–––
Max.
7.1
65
Units
°C/W
www.irf.com
1
08/21/06
IRFI4212H-117P
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
12
10
8
6
4
2
0
25 50 75 100 125 150
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Junction Temperature
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1
0.1 1msec
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
0.001
1 10
10msec
DC
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
4.5
4.0
3.5
ID = 250µA
3.0
2.5
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
D = 0.50
0.20
1 0.10
0.1
0.01
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
R4R4
τCτ
Ri (°C/W)
0.7942
1.3536
τ4τ4 2.2345
2.7177
τi (sec)
0.000208
0.001434
0.100647
1.9398
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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부품번호 | 상세설명 및 기능 | 제조사 |
IRFI4212H-117P | Digital Audio MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |