MDF11N65B 데이터시트 PDF

MDF11N65B 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.

미리보기를 사용할 수 없습니다

MDF11N65B

N-Channel MOSFET 650V, 12A, 0.65Ω

General Description

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.

Features

VDS = 650V

ID = 12A

RDS(ON) ≤ 0.65Ω

@ VGS = 10V

@ VGS = 10V

Applications

Power Supply

PFC

High Current, High Speed Switching

D

TO-220F

MDF Series

G

Absolute Maximum Ratings (Ta = 25oC)

Drain-Source Voltage

Gate-Source Voltage

Characteristics

Continuous Drain Current

Pulsed Drain Current(1)

Power Dissipation

Repetitive Avalanche Energy(1)

Peak Diode Recovery dv/dt(3)

Single Pulse Avalanche Energy(4)

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

TC=25oC

TC=100oC

TC=25oC

Derate above 25 oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient(1)

Thermal Resistance, Junction-to-Case(1)

Aug 2011 Version 1.1

1

Symbol

VDSS

VGSS

ID

IDM

PD

EAR

dv/dt

EAS

TJ, Tstg

Symbol

RθJA

RθJC

S

Rating

650

±30

12*

7.7*

48*

49.6

0.4

18.1

4.5

750

-55~150

Unit

V

V

A

A

A

W

W/oC

mJ

V/ns

mJ

oC

Rating

62.5

2.52

Unit

oC/W

MagnaChip Semiconductor Ltd.

10 ※ Note : ID = 12.0A

8

6

130V

325V

520V

4

2

0

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34

QG, Total Gate Charge [nC]

Fig.7 Gate Charge Characteristics

2800

Coss

2400

2000

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

1600

1200

800

Crss

400

※ Notes ;

1. VGS = 0 V

2. f = 1 MHz

0

1 10

VDS, Drain-Source Voltage [V]

Fig.8 Capacitance Characteristics

102

Operation in This Area

is Limited by R DS(on)

10 µs

101 100 µs

1 ms

10 ms

100 ms

DC

100

10-1

10-2

10-1

Single Pulse

TJ=Max rated

TC=25℃

100

101

102

VDS, Drain-Source Voltage [V]

Fig.9 Maximum Safe Operating Area

D=0.5

100

0.2

0.1

0.05

0.02

10-1

0.01

single pulse

※ Notes :

Duty Factor, D=t1/t2

PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC

RΘ JC=2.52℃/W

10-5 10-4 10-3 10-2 10-1 100 101

t1, Rectangular Pulse Duration [sec]

Fig.10 Transient Thermal Response Curve

6000

single Pulse

5000 RthJC =2.52℃/W

TC =25℃

4000

3000

2000

1000

0

1E-5 1E-4 1E-3 0.01

0.1

1

10

Pulse Width (s)

Fig.11 Single Pulse Maximum Power

Dissipation

14

13

12

11

10

9

8

7

6

5

4

3

2

1

0

25

50 75 100 125

TC, Case Temperature [℃]

150

Fig.12 Maximum Drain Current vs. Case

Temperature

Aug 2011 Version 1.1

4 MagnaChip Semiconductor Ltd.

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.