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NT5CB128M8AN 데이터시트 PDF




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부품번호 NT5CB128M8AN 기능
기능 1Gb DDR3 SDRAM A-Die
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NT5CB128M8AN 데이터시트, 핀배열, 회로
1Gb DDR3 SDRAM A-Die
NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP
Feature
1.5V ± 0.075V (JEDEC Standard Power Supply)
8 Internal memory banks (BA0- BA2)
Differential clock input (CK, )
Programmable  Latency: 5, 6, 7, 8, 9
Programmable Additive Latency: 0, CL-1, CL-2
Programmable Sequential / Interleave Burst Type
Programmable Burst Length: 4, 8
8 bit prefetch architecture
Output Driver Impedance Control
Write Leveling
OCD Calibration
Dynamic ODT (Rtt_Nom & Rtt_WR)
Auto Self-Refresh
Self-Refresh Temperature
Partial Array Self-Refresh
RoHS Compliance
Packages:
78-Ball BGA for x4 & x8 components
96-Ball BGA for x16 components
Description
The 1Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 1,073,741,824 bits. It is
internally configured as an octal-bank DRAM.
The 1Gb chip is organized as 32Mbit x 4 I/O x 8, 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device. These synchronous devices
achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a
pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All
I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.
These devices operate with a single 1.5V ± 0.75V power supply and are available in BGA packages.
REV 1.2
01 / 2009
1




NT5CB128M8AN pdf, 반도체, 판매, 대치품
1Gb DDR3 SDRAM A-Die
NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP
Pin Configuration 96 balls BGA Package (x16)
1
VDDQ
VSSQ
VDDQ
VSSQ
VSS
VDDQ
VSSQ
VREFDQ
NC
ODT
NC
VSS
VDD
VSS
VDD
VSS
< TOP View>
See the balls through the package
2
DQU5
VDD
DQU3
VDDQ
VSSQ
DQL2
DQL6

VSS
VDD

BA0
A3
A5
A7

3
DQU7
VSS
DQU1
DMU
DQL0
DQSL

DQL4



BA2
A0
A2
A9
NC
x 16
A
7
DQU4
B 
C DQSU
D DQU0
E DML
F DQL1
G VDD
H DQL7
J CK
K 
L A10/AP
M NC
N A12
P A1
R A11
T NC
8
VDDQ
DQU6
DQU2
VSSQ
VSSQ
DQL3
VSS
DQL5
VSS
VDD
ZQ
VREFCA
BA1
A4
A6
A8
9
VSS
VSSQ
VDDQ
VDD
VDDQ
VSSQ
VSSQ
VDDQ
NC
CKE
NC
VSS
VDD
VSS
VDD
VSS
REV 1.2
01 / 2009
4

4페이지










NT5CB128M8AN 전자부품, 판매, 대치품
1Gb DDR3 SDRAM A-Die
NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP
Ordering Information
Green
Organization
256M x 4
128M x 8
64M x 16
Part Number
NT5CB256M4AN-AC
NT5CB256M4AN-AD
NT5CB256M4AN-BE
NT5CB256M4AN-BF
NT5CB256M4AN-CF
NT5CB256M4AN-CG
NT5CB256M4AN-DG
NT5CB256M4AN-DH
NT5CB128M8AN-AC
NT5CB128M8AN-AD
NT5CB128M8AN-BE
NT5CB128M8AN-BF
NT5CB128M8AN-CF
NT5CB128M8AN-CG
NT5CB128M8AN-DG
NT5CB128M8AN-DH
NT5CB64M16AP-AC
NT5CB64M16AP-AD
NT5CB64M16AP-BE
NT5CB64M16AP-BF
NT5CB64M16AP-CF
NT5CB64M16AP-CG
NT5CB64M16AP-DG
NT5CB64M16AP-DH
Speed
Package
Clock
Data Rate (Mb/s)
(Mbp/s)
400 DDR3-800
400 DDR3-800
533 DDR3-1066
533 DDR3-1066
667 DDR3-1333
667 DDR3-1333
78-Ball wBGA
0.8mmx0.8mm
Pitch
800
800
400
400
DDR3-1600
DDR3-1600
DDR3-800
DDR3-800
533 DDR3-1066
533 DDR3-1066
667 DDR3-1333
667 DDR3-1333
800 DDR3-1600
800 DDR3-1600
400 DDR3-800
400 DDR3-800
96-Ball wBGA
0.8mmx0.8mm
Pitch
533
533
667
667
DDR3-1066
DDR3-1066
DDR3-1333
DDR3-1333
800 DDR3-1600
800 DDR3-1600
CL-TRCD-TRP
5-5-5
6-6-6
7-7-7
8-8-8
8-8-8
9-9-9
9-9-9
10-10-10
5-5-5
6-6-6
7-7-7
8-8-8
8-8-8
9-9-9
9-9-9
10-10-10
5-5-5
6-6-6
7-7-7
8-8-8
8-8-8
9-9-9
9-9-9
10-10-10
REV 1.2
01 / 2009
7

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NT5CB128M8AN

1Gb DDR3 SDRAM A-Die

Nanya
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