BUK762R7-30B 데이터시트 PDF

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BUK762R7-30B

N-channel TrenchMOS standard level FET

Rev. 04 — 8 June 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

„ Low conduction losses due to low

on-state resistance

„ Q101 compliant

„ Suitable for standard level gate drive

sources

„ Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

„ 12 V loads

„ Automotive systems

„ General purpose power switching

„ Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C

ID drain current

VGS = 10 V; Tmb = 25 °C;

see Figure 1; see Figure 3

Ptot total power dissipation Tmb = 25 °C; see Figure 2

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 25 A;

Tj = 25 °C; see Figure 11;

see Figure 12

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source avalanche

energy

Dynamic characteristics

ID = 75 A; Vsup ≤ 30 V;

RGS = 50 Ω; VGS = 10 V;

Tj(init) = 25 °C; unclamped

QGD

gate-drain charge

VGS = 10 V; ID = 25 A;

VDS = 24 V; Tj = 25 °C;

see Figure 13

[1] Continuous current is limited by package.

Min Typ Max Unit

- - 30 V

[1] - - 75 A

- - 300 W

- 2.3 2.7 mΩ

- - 2.3 J

- 29 - nC

NXP Semiconductors

250

ID

(A)

200

03ng51

150

100

50

Capped at 75 A due to package

0

0 50 100 150 200

Tmb (°C)

BUK762R7-30B

N-channel TrenchMOS standard level FET

120

Pder

(%)

80

03na19

40

0

0 50 100 150 200

Tmb (°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

104

ID

(A)

103

102

10

Limit RDSon = VDS/ID

Capped at 75 A due to package

DC

03ng27

tp = 10 μs

100 μs

1 ms

10 ms

100 ms

1

10−1

1

10 102

VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

BUK762R7-30B

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 04 — 8 June 2010

© NXP B.V. 2010. All rights reserved.

4 of 14

NXP Semiconductors

BUK762R7-30B

N-channel TrenchMOS standard level FET

350

ID

(A)

280

210

140

70

0

0

03nh14

20 Label is VGS (V)

10

7

6 5.5

5

4.5

4

2 4 6 8 10

VDS (V)

5

RDSon

(mΩ)

4

3

2

1

5

03nh13

10 15 20

VGS (V)

Fig 5. Output characteristics: drain current as a

Fig 6. Drain-source on-state resistance as a function

function of drain-source voltage; typical values

of drain current; typical values

10−1

ID

(A)

10−2

10−3

10−4

03aa35

min typ max

100

gfs

(S)

75

50

03nh11

10−5

25

10−6

0246

VGS (V)

0

0 20 40 60 80

ID (A)

Fig 7. Sub-threshold drain current as a function of

gate-source voltage

Fig 8. Forward transconductance as a function of

drain current; typical values

BUK762R7-30B

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 04 — 8 June 2010

© NXP B.V. 2010. All rights reserved.

7 of 14

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