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BUK7E2R7-30B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BUK7E2R7-30B
기능 N-channel TrenchMOS standard level FET
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BUK7E2R7-30B 데이터시트, 핀배열, 회로
BUK7E2R7-30B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Q101 compliant
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V loads
„ Automotive systems
„ General purpose power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source
Tj 25 °C; Tj 175 °C
voltage
- - 30 V
ID
drain current
VGS = 10 V; Tmb = 25 °C;
[1] - - 75 A
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
- - 300 W
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C; - 2.3 2.7 m
see Figure 11; see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup 30 V;
RGS = 50 ; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 2.3 J
QGD
gate-drain charge VGS = 10 V; ID = 25 A; VDS = 24 V; - 29 - nC
Tj = 25 °C; see Figure 13
[1] Continuous current is limited by package.




BUK7E2R7-30B pdf, 반도체, 판매, 대치품
NXP Semiconductors
250
ID
(A)
200
03ng51
150
100
50
Capped at 75 A due to package
0
0 50 100 150 200
Tmb (°C)
BUK7E2R7-30B
N-channel TrenchMOS standard level FET
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
104
ID
(A)
103
102
10
Limit RDSon = VDS/ID
Capped at 75 A due to package
DC
03ng27
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
1
101
1
10 102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7E2R7-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 June 2010
© NXP B.V. 2010. All rights reserved.
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BUK7E2R7-30B 전자부품, 판매, 대치품
NXP Semiconductors
BUK7E2R7-30B
N-channel TrenchMOS standard level FET
350
ID
(A)
280
210
140
70
0
0
03nh14
20 Label is VGS (V)
10
7
6 5.5
5
4.5
4
2 4 6 8 10
VDS (V)
5
RDSon
(mΩ)
4
3
2
1
5
03nh13
10 15 20
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
101
ID
(A)
102
103
104
03aa35
min typ max
100
gfs
(S)
75
50
03nh11
105
25
106
0246
VGS (V)
0
0 20 40 60 80
ID (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7E2R7-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 June 2010
© NXP B.V. 2010. All rights reserved.
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부품번호상세설명 및 기능제조사
BUK7E2R7-30B

N-channel TrenchMOS standard level FET

NXP Semiconductors
NXP Semiconductors

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