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부품번호 | FOD3120 기능 |
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기능 | Gate Drive Optocoupler | ||
제조업체 | Fairchild Semiconductor | ||
로고 | ![]() |
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전체 22 페이지수
![]() October 2009
FOD3120
High Noise Immunity, 2.5A Output Current,
Gate Drive Optocoupler
Features
■ High noise immunity characterized by 35kV/µs
minimum common mode rejection
■ 2.5A peak output current driving capability for most
1200V/20A IGBT
■ Use of P-channel MOSFETs at output stage enables
output voltage swing close to the supply rail
■ Wide supply voltage range from 15V to 30V
■ Fast switching speed
– 400ns max. propagation delay
– 100ns max. pulse width distortion
■ Under Voltage LockOut (UVLO) with hysteresis
■ Extended industrial temperate range, -40°C to 100°C
temperature range
■ Safety and regulatory approved
– UL1577, 5000 VRMS for 1 min.
– IEC60747-5-2
■ RDS(ON) of 1Ω (typ.) offers lower power
dissipation
■ >8.0mm clearance and creepage distance
(option ‘T’ or ‘TS’)
■ 1,414V Peak Working Insulation Voltage (VIORM)
Applications
■ Industrial inverter
■ Uninterruptible power supply
■ Induction heating
■ Isolated IGBT/Power MOSFET gate drive
Description
The FOD3120 is a 2.5A Output Current Gate Drive
Optocoupler, capable of driving most 1200V/20A
IGBT/MOSFET. It is ideally suited for fast switching
driving of power IGBT and MOSFETs used in motor
control inverter applications, and high performance
power system.
It utilizes Fairchild’s proprietary coplanar packaging
technology, Optoplanar®, and optimized IC design to
achieve high noise immunity, characterized by high
common mode rejection.
It consists of a gallium aluminum arsenide (AlGaAs) light
emitting diode optically coupled to an integrated circuit
with a high-speed driver for push-pull MOSFET output
stage.
Related Resources
■ FOD3150, 1A Output Current, Gate Drive
Optocoupler Datasheet
■ www.fairchildsemi.com/products/opto/
Functional Block Diagram
Package Outlines
NC 1
ANODE 2
8 VCC
7 VO2
8
CATHODE 3
6 VO1
NC 4
5 VEE
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
©2003 Fairchild Semiconductor Corporation
FOD3120 Rev. 1.17.0
8
11
8
1
8
1
www.fairchildsemi.com
![]() ![]() Absolute Maximum Ratings (TA = 25ºC unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TSTG
TOPR
TJ
TSOL
IF(AVG)
IF(PEAK)
f
VR
IO(PEAK)
VCC – VEE
VO(PEAK)
tR(IN), tF(IN)
PDI
PDO
Parameter
Storage Temperature
Operating Temperature
Junction Temperature
Lead Wave Solder Temperature
(refer to page 21 for reflow solder profile)
Average Input Current
Peak Transient Forward Current(10)
Operating Frequency(11)
Reverse Input Voltage
Peak Output Current(1)
Supply Voltage
Peak Output Voltage
TA ≥ 90°C
Input Signal Rise and Fall Time
Input Power Dissipation(2)(4)
Output Power Dissipation(3)(4)
Value
-55 to +125
-40 to +100
-40 to +125
260 for 10sec
25
1
50
5
3.0
0 to 35
0 to 30
0 to VCC
500
45
250
Units
ºC
ºC
ºC
ºC
mA
A
kHz
V
A
V
V
ns
mW
mW
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
TA
VCC – VEE
IF(ON)
VF(OFF)
Parameter
Ambient Operating Temperature
Power Supply
Input Current (ON)
Input Voltage (OFF)
Value
-40 to +100
15 to 30
7 to 16
0 to 0.8
Units
°C
V
mA
V
Isolation Characteristics
Apply over all recommended conditions, typical value is measured at TA = 25ºC
Symbol
Parameter
Conditions
VISO
RISO
CISO
Input-Output Isolation
Voltage
Isolation Resistance
Isolation Capacitance
TA = 25ºC, R.H.< 50%, t = 1.0min,
II-O ≤ 10µA, 50Hz(5)(6)
VI-O = 500V(5)
VI-O = 0V, Freq = 1.0MHz(5)
Min.
5000
Typ.
1011
1
Max. Units
VRMS
Ω
pF
©2003 Fairchild Semiconductor Corporation
FOD3120 Rev. 1.17.0
4
www.fairchildsemi.com
4페이지 ![]() ![]() Typical Performance Curves
Fig. 1 Output High Voltage Drop vs. Output High Current
0.5
Frequency = 250Hz
Duty C ycle = 0.1%
0.0 IF = 7 to 16mA
VCC = 1 5 to 30V
VE E = 0V
- 0.5
- 1.0
TA = -40°C
- 1.5
- 2.0
TA = 25°C
TA = 100 °C
- 2.5
- 3.0
0. 0
0.5 1.0 1.5 2.0
IOH - OUTPUT HIGH CURRENT (A)
2.5
Fig. 2 Output High Voltage Drop vs. Ambient Temperature
0.00
-0.05
VC C = 15V to 30V
VEE = 0V
IF = 7mA to 16mA
IO = -100mA
-0.10
-0.15
-0.20
-0.25
-0.30
-40
-20 0 20 40 60
TA - AMBIENT TEMPERATURE (°C)
80
100
Fig. 3 Output High Current vs. Ambient Temperature
8
f = 200 Hz
DUTY CYCLE = 0.2%
IF = 7 to 16mA
Rg = 5Ω to GND
6
VCC = 30V
4
VCC = 15V
2
0
-4 0 -2 0
0
20 40 60 80 10 0
TA – AMBIENT TEMPERATURE (°C)
Fig. 4 Output High Current vs. Ambient Temperature
5
f = 10 0 Hz
DUTY CYCLE = 0.5%
IF = 7 t o 16mA
4 Rg = 10Ω to GND
3
V = 30V
CC
2
VCC = 15V
1
0
-4 0 -20
0
2 0 40 60 80 100
TA – AMBIENT TEMPERATURE (°C)
Fig. 5 Output Low Voltage vs. Output Low Current
4
Frequency = 250Hz
Duty Cycle = 99.9%
VF( OFF) = -3.0V to 0.8V
VCC = 15V to 30V
3 VEE = 0V
TA = 100°C
TA = 25°C
2
1 TA = -40°C
0
0.0 0.5 1.0 1.5 2.0 2.5
IOL - OUTPUT LOW CURRENT (A)
Fig. 6 Output Low Voltage vs. Ambient Temperature
0.25
0.20
V CC = 15V to 30V
V EE = 0V
VF(OFF) = -3V to 0.8V
IO = 100mA
0.15
0.10
0.05
0.00
-40
-20 0 20 40 60 80
TA - AMBIENT TEMPERATURE (°C)
100
©2003 Fairchild Semiconductor Corporation
FOD3120 Rev. 1.17.0
7
www.fairchildsemi.com
7페이지 | |||
구 성 | 총 22 페이지수 | ||
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