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DG2N60

N 沟道增强型场效应晶体管

N-CHANNEL ENHANCEMENT MODE MOSFET

版本号：V1.0

产品概述 General Description

DG2N60是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平

面工艺及先进的终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该

产品能应用于多种功率开关电路，使得电源能效更高，系统更加小型化。

DG2N60 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s

proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve

switching performance and enhance the avalanche energy. The transistor can be used in various power switching

circuit for higher efficiency and system miniaturization.

主要参数 MAINCHARACTERISTICS

VDSS

ID

RDS(ON)

Crss

600

2

4.7

8.0

V

A

Ω

pF

符号 Symbol

封装 Package

1 /11

开关特性 Switching Characteristics

参数名称

Parameter

延迟时间Turn-On delay time

符号

Symbol

td(on)

测试条件

Tests Conditions

最小

Min

-

上升时间Turn-On rise time

延迟时间Turn-Off delay time

tr

td(off)

VDD=300V, ID=2A, RG=25Ω

(note 4，5)

-

-

下降时间Turn-Off Fall time

tf

-

栅极电荷总量Total Gate Charge

栅－源电荷Gate-Source charge

栅－漏电荷Gate-Drain charge

Qg

Qgs

VDS =480V , ID=2A, VGS =10V

(note 4，5)

Qgd

-

-

-

典型 最大 单位

Type Max Unit

16 40 ns

50 110 ns

40 90 ns

45 95 ns

16 22 nC

2.1 - nC

7.5 - nC

漏-源二极管特性及最大额定值

Drain-Source Diode Characteristics and Maximum Ratings

参数名称

符号

测试条件

最小

Parameter

正向最大连续电流

Maximum Continuous Drain-Source

Diode Forward Current

正向最大脉冲电流

Maximum Pulsed Drain-Source Diode

Forward Current

Symbol

Tests Conditions

IS

ISM

Min

-

-

正向压降

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS=2A

-

反向恢复时间

Reverse recovery time

反向恢复电荷

Reverse recovery charge

trr -

VGS=0V, IS=2A

dIF/dt=100A/µs (note 4)

Qrr -

典型 最大 单位

Type Max Unit

- 2A

- 6A

- 1.5 V

260 - ns

1.5 - µC

注释：

1：脉冲宽度由最高结温限制

2：L=55mH, IAS=2A, VDD=50V, RG=25 Ω, 起始结温TJ=25℃

3：ISD ≤2A, di/dt ≤300A/µs, VDD≤BVDSS, 起始结温TJ=25℃

4：脉冲测试：脉冲宽度≤300µs,占空比≤2％

5：基本与工作温度无关

Notes:

1：Pulse width limited by maximum junction temperature

2：L=55mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ=25℃

3：ISD ≤2A, di/dt ≤300A/µs, VDD≤BVDSS, Starting TJ=25℃

4：Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2％

5：Essentially independent of operating temperature

4 /11

测试电路及波形 TEST CIRCUITS AND WAVEFORMS

图13. 开关特性测试

Fig.13 Resistive Switching Test Circuit & Waveforms

图14. 栅电荷测试

Fig.14 Gate Charge Test Circuit & Waveform

图15. 雪崩能量测试

Fig.15 Unclamped Inductive Switching Test Circuit & Waveforms

7 /11

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