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PDF UPA1816 Data sheet ( Hoja de datos )
| Número de pieza | UPA1816 | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1816
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1816 is a switching device which can be
driven directly by a 1.8 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power management of notebook
computers and so on.
FEATURES
• 1.8 V drive available
• Low on-state resistance
RDS(on)1 = 15 mΩ MAX. (VGS = −4.5 V, ID = −4.5 A)
RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −4.5 A)
RDS(on)3 = 22.5 mΩ MAX. (VGS = −2.5 V, ID = −4.5 A)
RDS(on)4 = 41.5 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A)
• Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
1.2 MAX.
1.0 ±0.05
0.25
14
3°
+5°
–3°
0.1 ±0.05
0.5
0.6
+0.15
–0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
µPA1816GR-9JG
PACKAGE
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID(DC)
ID(pulse)
PT
Channel Temperature
Tch
Storage Temperature
Tstg
−12
m 8.0
m 9.0
m 36
2.0
150
−55 to +150
V
V
A
A
W
°C
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16252EJ1V0DS00 (1st edition)
Date Published July 2002 NS CP(K)
Printed in Japan
©
2002
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
VGS = −4.5 V
Pulsed
TA = 125°C
15
75°C
25°C
−25°C
10
µ PA1816
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
VGS = −4.0 V
Pulsed
TA = 125°C
15 75°C
25°C
−25°C
10
5
-0.01
-0.1 -1 -10
ID - Drain Current - A
-100
5
-0.01
-0.1 -1 -10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
VGS = −2.5 V
Pulsed
30 TA = 125°C
75°C
25°C
−25°C
20
10
0
-0.01
-0.1 -1
-10
ID - Drain Current - A
-100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
VGS = −1.8 V
Pulsed
30
20
TA = 125°C
75°C
10 25°C
−25°C
0
-0.01
-0.1 -1
-10
ID - Drain Current - A
-100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1.0 MHz
1000
Ciss
Coss
Crss
100
-0.1
-1 -10 -100
VDS - Drain to Source Voltage - V
10000
1000
SWITCHING CHARACTERISTICS
VDD = −10 V
VGS = −4.0 V
tf RG = 10 Ω
100
10
td(off)
td(on)
tr
1
-0.01
-0.1 -1
ID - Drain Current - A
-10
Data Sheet G16252EJ1V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet UPA1816.PDF ] | |
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