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Datasheet RBV402 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RBV402 | Silicon Bridge Rectifiers Production specification
Silicon Bridge Rectifiers
FEATURES
z Ideal for printed circuit board z Reliable low cost construction utilizing molded
plastic technique results in inexpensive product z Surge overload rating: 80 amperes peak
RBV4005--RBV410
Pb
Lead-free
MAXIMUM RATINGS AND ELECTRICAL CHA |  Galaxy Microelectronics | rectifier |
| 2 | RBV402 | Diode, Rectifier |  American Microsemiconductor | diode |
| 3 | RBV402 | SILICON BRIDGE RECTIFIERS RBV401 - RBV406
PRV : 100 - 600 Volts Io : 4.0 Amperes
SILICON BRIDGE RECTIFIERS
RBV4
0.150 (3.8)
0.134 (3.4)
C3
0.996 (25.3)
0.189 (4.8)
0.972 (24.7)
0.173 (4.4)
0.383(9.7) 0.367(9.3) 0.709 (18) 0.669 (17)
0.134(3.4) 0.122(3.1)
FEATURES :
* High current capability * High surge current ca |  EIC | rectifier |
| 4 | RBV402 | SILICON BRIDGE RECTIFIERS BL GALAXY ELECTRICAL
RBV4005---RBV410
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 4.0 A
FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 80 amperes peak
KBJ4
inch (mm)
MAXIMUM RATINGS AND ELEC |  Galaxy Semi-Conductor | rectifier |
| 5 | RBV402 | Silicon Bridge Rectifiers Features
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic technique
Surge overload rating: 80 amperes peak
RBV4005-RBV410
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 4.0 A
KBJ4
25± 0.3 3.2± 0.15
4.7± 0.2 3.7± 0.2
4.6± 0.15
15± 0. |  LGE | rectifier |
RBV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RBV-1004B | Bridge Diodes (Schottky Barrier) Bridge Diodes (Schottky Barrier)
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) Tj (°C) Tstg (°C) VF (V) max per element Electrical Characteristics (Ta = 25°C) IR (mA) VR = VRM
max per element
Others Rth ( j-c) IF /IRP (mA) (°C/ W) Mass Fig. (g)
50Hz With Half-cycle  Sanken electric diode | | |
| 2 | RBV-1306 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 3 | RBV-1506 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 4 | RBV-1506S | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 5 | RBV-2506 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 6 | RBV-401 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (ºC) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth (j-c) (ºC/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 7 | RBV-402 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (ºC) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth (j-c) (ºC/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | |
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