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PDF MJE13009G Data sheet ( Hoja de datos )
| Número de pieza | MJE13009G | |
| Descripción | NPN Silicon Power Transistors | |
| Fabricantes | ON Semiconductor | |
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MJE13009G
SWITCHMODE Series
NPN Silicon Power
Transistors
The MJE13009G is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
• VCEO(sus) 400 V and 300 V
• Reverse Bias SOA with Inductive Loads @ TC = 100_C
• Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C tc @ 8 A,
100_C is 120 ns (Typ)
• 700 V Blocking Capability
• SOA and Switching Applications Information
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
Emitter Current
− Continuous
− Peak (Note 1)
Total Device Dissipation
Derate above 25°C
@
TA
=
25_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
TJ, Tstg
Value
400
700
9
12
24
6
12
18
36
2
0.016
100
0.8
−65 to
+150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
W
W/_C
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
RqJA
RqJC
TL
62.5 _C/W
1.25 _C/W
275 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 10
1
http://onsemi.com
12 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 100 WATTS
TO−220AB
CASE 221A−09
STYLE 1
123
MARKING DIAGRAM
MJE13009G
AY WW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13009G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
MJE13009/D
1 page  
MJE13009G
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
5V
PW
DUTY CYCLE ≤ 10% 68
tr, tf ≤ 10 ns
+ 5 V
0.001 mF
1N4933 33
MJE210
33 1N4933
2N2222
1
k
1
+ 5 Vk
RB
IB
VCC
L
IC
1N4933
NOTE
0.02 mF 270
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
1k
2N2905
47 100
1/2 W
D.U.T.
MJE200
- VBE(off)
MR826*
Vclamp
*SELECTED FOR ≥ 1 kV
5.1 k
VCE
51
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200 mH/20 A
Lcoil = 200 mH
IC
ICM
t1
VCE
VCEM
TIME
OUTPUT WAVEFORMS
tf CLAMPED
tf UNCLAMPED ≈ t2
t
tf
t1 ADJUSTED TO
OBTAIN IC
t1 ≈
Lcoil (ICM)
VCC
Vclamp
t2
t2 ≈
Lcoil (ICM)
Vclamp
VCC = 20 V
Vclamp = 300 Vdc
Test Equipment
Scope−Tektronics
475 or Equivalent
RESISTIVE
SWITCHING
+125 V
RC
TUT
RB SCOPE
D1
- 4.0
V
VCC = 125 V
RC = 15 W
D1 = 1N5820 or Equiv.
RB = W
+10 V
25 ms
0
-8 V
tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
http://onsemi.com
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