|
|
PDF CPV362M4FPbF Data sheet ( Hoja de datos )
| Número de pieza | CPV362M4FPbF | |
| Descripción | IGBT SIP Module | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CPV362M4FPbF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
www.vishay.com
CPV362M4FPbF
Vishay Semiconductors
IGBT SIP Module
(Fast IGBT)
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE
IRMS per phase (3.1 kW total)
with TC = 90 °C
TJ
11 A
125 °C
Supply voltage
Power factor
360 VDC
0.8
Modulation depth See fig. 1
115 %
VCE(on) (typical)
at IC = 4.8 A, 25 °C
Package
1.41 V
SIP
Circuit
Three Phase Inverter
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
• Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve
RoHS
COMPLIANT
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to the advanced line of IMS
(Insulated Metal Substrate) power modules. These modules
are more efficient than comparable bipolar transistor
modules, while at the same time having the simpler
gate-drive requirements of the familiar power MOSFET. This
superior technology has now been coupled to a state of the
art materials system that maximizes power throughput with
low thermal resistance. This package is highly suited to
motor drive applications and where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current, each
IGBT
IC
Pulsed collector current
ICM
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each
IGBT
Operating junction and
storage temperature range
Soldering temperature
Mounting torque
ILM
IF
IFM
VGE
VISOL
PD
TJ, TStg
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
Repetitive rating; VGE = 20 V,
pulse width limited by maximum
junction temperature. See fig. 20
VCC = 80 % (VCES), VGE = 20 V,
L = 10 μH, RG = 50 See fig. 19
TC = 100 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
For 10 s
6-32 or M3 screw
MAX.
600
8.8
4.8
UNITS
V
26
A
800
3.4
26
± 20
2500
23
9.1
V
VRMS
W
- 40 to + 150
300 (0.063" (1.6 mm) from case)
5 to 7
(0.55 to 0.8)
°C
lbf · in
(N · m)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each diode, one diode in conduction
Case to sink, flat, greased surface
Weight of module
RthJC (IGBT)
RthJC (diode)
RthCS (module)
TYP.
-
-
0.1
20 (0.7)
MAX.
5.5
9.0
-
-
UNITS
°C/W
g (oz.)
Revision: 11-Jun-13
1 Document Number: 94361
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
2.0 RG = 50 Ω
TJ = 150 °C
VCC = 480 V
1.5 VGE = 15 V
1.0
0.5
0.0
0 2 4 6 8 10
IC - Collector to Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector to Emitter Current
100
VGE = 20 V
TJ = 125 °C
Safe operating area
10
CPV362M4FPbF
Vishay Semiconductors
100
VR = 200 V
TJ = 125 °C
80 TJ = 25 °C
60
40
IF = 4.0 A
20
IF = 16 A
IF = 8.0 A
0
100
1000
dIF/dt (A/µs)
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
100
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
10 IF = 8.0 A
1
1 10 100 1000
VCE - Collector to Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
IF = 4.0 A
1
100
1000
dIF/dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dIF/dt
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
VFM - Forward Voltage Drop
Fig. 13 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
500
VR = 200 V
TJ = 125 °C
400 TJ = 25 °C
300
IF = 16 A
200
IF = 8.0 A
100
IF = 4.0 A
0
100
1000
dIF/dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dIF/dt
Revision: 11-Jun-13
5 Document Number: 94361
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet CPV362M4FPbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CPV362M4FPbF | IGBT SIP Module | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |