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CPV363M4UPbF 데이터시트 PDF




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부품번호 CPV363M4UPbF 기능
기능 IGBT SIP Module
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CPV363M4UPbF 데이터시트, 핀배열, 회로
www.vishay.com
CPV363M4UPbF
Vishay Semiconductors
IGBT SIP Module
(Ultrafast IGBT)
IMS-2
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
IRMS per phase (2.1 kW total)
with TC = 90 °C
TJ
Supply voltage
Power factor
7.1 ARMS
125 °C
360 VDC
0.8
Modulation depth (see fig. 1)
115 %
VCE(on) (typical)
at IC = 6.8 A, 25 °C
Package
1.7 V
SIP
Circuit
Three Phase Inverter
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
• HEXFRED® soft ultrafast diodes
RoHS
COMPLIANT
• Optimized for medium speed 1 to 10 kHz
See fig. 1 for current vs. frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
SYMBOL
VCES
Continuous collector current, each IGBT
IC
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
ICM (1)
ILM (2)
IF
IFM
VGE
VISOL
Maximum power dissipation, each IGBT
PD
Operating junction and storage temperature range TJ, TStg
Soldering temperature
TEST CONDITIONS
TC = 25 °C
TC = 100 °C
TC = 100 °C
Any terminal to case, t = 1 min
TC = 25 °C
TC = 100 °C
For 10 s, (0.063" (1.6 mm) from case)
Mounting torque
6-32 or M3 screw
Notes
(1) Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2) VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, RG = 23 (see fig. 19)
MAX.
600
13
6.8
40
40
6.1
40
± 20
2500
36
14
- 40 to + 150
300
5 to 7
(0.55 to 0.8)
UNITS
V
A
V
VRMS
W
°C
lbf in
(N m)
Revision: 11-Jun-13
1 Document Number: 94486
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




CPV363M4UPbF pdf, 반도체, 판매, 대치품
www.vishay.com
CPV363M4UPbF
Vishay Semiconductors
12
10
8
6
4
2
0
0.1
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
3.50
2.92
2.33
1.75
1 10
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
1.17
0.58
0.00
100
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.1
VGE = 15V
20µs PULSE WIDTH
1 10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
14
VGE = 15V
12
10
8
6
4
2
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
100
TJ = 150°C
10
TJ = 25°C
1
V CC = 10V
5µs PULSE WIDTH
0.1
5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0 VGE = 15V
80 us PULSE WIDTH
IC =13.6A
2.0
IC= 6.8A
IC= 3.4A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 11-Jun-13
4 Document Number: 94486
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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CPV363M4UPbF 전자부품, 판매, 대치품
www.vishay.com
160
VR = 200V
TJ = 125°C
TJ = 25°C
120
IF = 24A
IF = 12A
80
IF = 6.0A
40
0
100 1000
dif /dt - (A/µs)
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
100
VR = 200V
TJ = 125°C
TJ = 25°C
IF = 24A
I F = 12A
10
IF = 6.0A
1
100 1000
dif /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dIF/dt
CPV363M4UPbF
Vishay Semiconductors
600
VR = 200V
TJ = 125°C
TJ = 25°C
400
IF = 24A
200 IF = 12A
IF = 6.0A
0
100 1000
dif /dt - (A/µs)
Fig. 16 - Typical Stored Charge vs. dIF/dt
10000
VR = 200V
TJ = 125°C
TJ = 25°C
1000
IF = 6.0A
IF = 12A
100
IF = 24A
10
100
dif /dt - (A/µs)
Fig. 17 - Typical dI(rec)M/dt vs dIF/dt
1000
Revision: 11-Jun-13
7 Document Number: 94486
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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부품번호상세설명 및 기능제조사
CPV363M4UPbF

IGBT SIP Module

Vishay
Vishay

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