PDF TA0003 Data sheet ( Hoja de datos )

Número de pieza	TA0003
Descripción	HBT Technology Adds Power to CDMA Chip Set
Fabricantes	RF Micro Devices
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No Preview Available ! TA0003 TA0003 HBT Technology Adds Power to CDMA Chip Set Efficient bandwidth utilization and low operating power characterize code-division-multiple-access (CDMA) transmissions, capturing the interest of several major telephone carriers in the technology. In support of future CDMA and dual-mode (analog/CDMA) handset designs, the engineers at RF Micro Devices (Greens- boro, NC), in cooperation with CDMA-developer Qual- comm, Inc.(San Diego, CA) and device foundry TRW (Redondo Beach, CA), have created an RF chip set with the performance levels required by CDMA system designers. The chip set is based on the low-power GaAs hetero- junction-bipolar-transistor (HBT) device technology from TRW. The CDMA chips perform all the RF front- end functions in a handset (Fig. 1), including frequency translation, RF and intermediate-frequency (IF) amplifi- cation, and automatic gain control (AGC). The chip set consists of the RF9906 low-noise ampli- fier (LNA)/mixer, the RF9908 upconverter integrated circuits (ICs), and the RF9907 and RF9909 AGC amplifier ICs. These ICs can be used in a handset design prior to second-stage frequency conversion. The RF9906 integrates a low-noise preamplifier, dou- ble-balanced mixer, two switched variable-gain IF amplifiers, and a switched local-oscillator (LO) output buffer amplifier (Fig. 2). The IC is housed in a QSOP- 24 surface-mount package and is designed to provide high dynamic range from a single +3.6 VDC supply without additional external matching networks or bias circuitry. The RF9906 is optimized for 850 to 900 MHz assum- ing 2.5 to 3.0 dB external image filter loss, although the wideband circuits provide similar performance from 500 to 1500 MHz. The 1 dB IF bandwidth is 110 MHz to either output port. The overall gain of the RF9906 is 26 dB to the differen- tial (IF1) port or 16 dB to the single-ended (IF2) port at the nominal gain setting. The gain can be tuned by (4.5 dB by adjusting a control voltage between 0.5 and 2.5 V. The IF output impedance is 1kΩ for IF1 and 750Ω for IF2 ports. The overall noise figure is 2.8 dB and the input third-order intercept point is -8 dBm at the nomi- nal gain setting. The RF and LO input-port VSWRs are less than 1.50:1, while the LO output-port VSWR is less than 2.00:1. The LO-to-RF isolation is more than 50 dB in addition to image filter rejection. The RF9906’s LNA employs a combination of series and shunt feedback around a common-emitter ampli- fier to achieve excellent port impedance match without reactive elements. The gain is 16 dB, with more than 22 dB reverse isolation at 880 MHz (Fig. 3). The noise figure is less than 1.5 dB at frequencies below 1.2 GHz (Fig. 4). The input third-order intercept point is -3 dBm. The DC current drain is 7 mA. Power Amp & Driver RF Micro Devices RF9908 Upconverter RF Micro Devices RF9909 Tx AGC Amp DUPLEXER UHF Synth VCTCXO Synth Qualcomm BB2 Baseband Analog ASIC DAC DAC VCO/ SYNTH VCO ADC ADC Qualcomm MSM 2 Mobile Station MODEM ASIC MODULATOR INTERLEAVER CONTROL PROCESSOR VOCODER VITERBI DECODER CDMA DEMOD KEYPAD RINGER LCD & DRIVER AUDIO CODEC RF Micro Devices RF9906 LNA/Mixer RF Micro Devices RF9907 Rx AGC Amp ADC ADC FM DEMOD Figure 1: The CDMA chips provide the basic front-end functions required by a handset design. 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