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PDF FZ800R33KF2C Data sheet ( Hoja de datos )
| Número de pieza | FZ800R33KF2C | |
| Descripción | IGBT-Module | |
| Fabricantes | Infineon | |
| Logotipo |  |
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TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ800R33KF2C
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Tvj = -25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
VorläufigeDaten
PreliminaryData
VCES
IC nom
IC
ICRM
Ptot
VGES
3300
3300
800
1300
1600
9,60
+/-20
V
A
A
A
kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 800 A, VGE = 15 V
IC = 800 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 80,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V, VCE = 1800V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 3300 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 800 A, VCE = 1800 V
VGE = ±15 V
RGon = 1,4 Ω, CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 800 A, VCE = 1800 V
VGE = ±15 V
RGon = 1,4 Ω, CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 800 A, VCE = 1800 V
VGE = ±15 V
RGoff = 1,8 Ω, CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 800 A, VCE = 1800 V
VGE = ±15 V
RGoff = 1,8 Ω, CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 800 A, VCE = 1800 V, LS = 40 nH
VGE = ±15 V
RGon = 1,4 Ω, CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 800 A, VCE = 1800 V, LS = 40 nH
VGE = ±15 V
RGoff = 1,8 Ω, CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE ≤ 15 V, VCC = 2500 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
3,40 4,25
4,30 5,00
V
V
4,2 5,1 6,0 V
15,0 µC
0,63 Ω
100 nF
5,40 nF
5,0 mA
400 nA
0,28
0,28
µs
µs
0,18
0,20
µs
µs
1,55
1,70
µs
µs
0,20
0,20
µs
µs
930
1450
mJ
mJ
870
1000
mJ
mJ
4000
A
13,0 K/kW
9,00
K/kW
-40 125 °C
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.1
1
1 page  
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ800R33KF2C
SchaltverlusteIGBT,Wechselrichter(typisch)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=800A,VCE=1800V,CGE=150nF
8000
7000
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
VorläufigeDaten
PreliminaryData
TransienterWärmewiderstandIGBT,Wechselrichter
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
100
ZthJC : IGBT
6000
5000
10
4000
3000
2000
1
1000
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
RG [Ω]
0,1
0,001
0,01
i: 1 2 3 4
ri[K/kW]: 5,85 3,25 0,78 3,12
τi[s]: 0,03 0,1 0,3 1
0,1 1
t [s]
10
SichererRückwärts-ArbeitsbereichIGBT,Wechselrichter
(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1.8Ω,Tvj=125°C,CGE=150nF
1800
1600
IC, Modul
IC, Chip
1400
1200
1000
800
600
400
200
DurchlasskennliniederDiode,Wechselrichter(typisch)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
1600
1400
Tvj = 25°C
Tvj = 125°C
1200
1000
800
600
400
200
0
0 500 1000 1500 2000 2500 3000 3500
VCE [V]
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VF [V]
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.1
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FZ800R33KF2C.PDF ] | |
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