Datasheet.kr   

FZE1658G 데이터시트 PDF




Infineon Technologies AG에서 제조한 전자 부품 FZE1658G은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 FZE1658G 자료 제공

부품번호 FZE1658G 기능
기능 8 x Digital Sensor Interface
제조업체 Infineon Technologies AG
로고 Infineon Technologies AG 로고


FZE1658G 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 18 페이지수

미리보기를 사용할 수 없습니다

FZE1658G 데이터시트, 핀배열, 회로
8 x Digital Sensor Interface
FZE 1658G
Features
q Input protection against 2000 V burst/500 V surge
pulse according to IEC 801 4/5
q Input characteristic according to IEC 65 A, type 2
(24 V DC)
q Digital filter
q Serial in/out for easy cascading
q Low power dissipation
q SMD package
P-DSO-24-1
Type
FZE 1658G
Ordering Code
Q67000-A8361
Package
P-DSO-24-1
The FZE 1658G is an integrated interface for digital sensors - i.e. proximity switches - in
industrial automation equipment. The IC has eight integrated highly protected and
failsafe inputs with status LED and a serial synchronous output for direct MC-interfacing.
Semiconductor Group
1
01.97




FZE1658G pdf, 반도체, 판매, 대치품
FZE 1658G
Functional Description and Application
The Integrated circuit FZE 1658G is used to detect the signal states of eight independent
input lines according to IEC 65A Type 2 (e.g. two-wire proximity switches) with a
common ground (GND). For operation in accordance with IEC 65A, it is necessary for
the device to be wired with resistors rated RV = 820 and REXT = 4.4 kwith ± 2 %
tolerance and 200 ppm TK. The input device has the following characteristics:
– Minimization of power dissipation due to constant current characteristic
– Inputs protected against reverse polarity and transient overvoltages
– Status LED output for each input
– Digital averaging of the input signals to suppress interference pulses
– Serial output of the detected signals (cascadable)
Maximum voltage ratings at inputs D0 ... D7 within test circuit 2.
DC voltage
Overvoltage 500 ms
Overvoltage 1.3 ms
to VDE 0160
Surge pulse 50 µs
to IEC 801-5, Zi = 2
Burst pulse 50 ns
to IEC 801-4, Zi = 50
Voltage Range
– 3 V … + 32 V
– 32 V … + 32 V
– 3 V … + 35 V
– 35 V … + 35 V
– 3 V … + 55 V
± 55
± 0.5 kV
± 2 kV
Notes
full function
non-destructive, no latch-up
full function
non-destructive, no latch-up
full function
non-destructive, no latch-up
1)
2)
1) Non-destructive in temperature range 15 °C TA 35 °C.
2) In temperature range 15 °C TA 35 °C:
Data retained if the supply voltage remains within the operating range; without supply voltage
non-destructive.
The rated voltage may be applied to all inputs simultaneously.
The values given in the table may be regarded as guaranteed, but are only checked as
part of a qualification (no 100 % series testing).
Within the application circuit given the same voltage ratings as above apply for the
supply line.
Semiconductor Group
4

4페이지










FZE1658G 전자부품, 판매, 대치품
FZE 1658G
Absolute Maximum Ratings
Tj = – 40 to 150 °C
Parameter
Symbol
Limit Values Unit Notes
min. max.
Transient input current
inputs I0 - I7
Ground current
Junction temperature
Storage temperature
Thermal resistance
System/air
II – 0.6 0.6 A t50 % 50 µs
– 1.2 1.2 A t50 % 1.2 µs
– 2.5 2.5 A t50 % 50 ns
IGND
–5 5
A t50 % 50 µs
– 10 10
A t50 % 50 ns
Tj – 40 150 °C
TS – 50 125 °C
Rthja 95 K/W soldered-in
Transient thermal resistance;
Same current through all
inputs I0 - I7
Zth
Zth
0.15 K/W 50 µs pulse
0.4 K/W 120 µs pulse
Supply voltage
Ground offset DGND to GND
Current at the LED outputs
VS
VDGND
IL
Voltage at
T, LO-N, SO-N, SE-N
VLOG
– 0.3 65
–4 4
– 15
– 500
– 250
– 125
15
500
250
125
–4 9
– 0.3 9
V
V VDGND < VS
mA
mA t50 % 50 µs
mA t50 % 1.2 µs
mA t50 % 50 µs
V
V referred to DGND
Capacitance at CT
CCT
ESD voltage 100 pF / 1.5 kVESD
1000
2 µF
1000 V
when VS falls
below VCT
MIL Std. 883
Meth. 3015
All voltages are, unless otherwise specified, referred to GND. This also applies to the
operating range and the characteristics.
Semiconductor Group
7

7페이지


구       성 총 18 페이지수
다운로드[ FZE1658G.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
FZE1658G

8 x Digital Sensor Interface

Siemens Semiconductor Group
Siemens Semiconductor Group
FZE1658G

8 x Digital Sensor Interface

Infineon Technologies AG
Infineon Technologies AG

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵