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PDF FZT655 Data sheet ( Hoja de datos )
| Número de pieza | FZT655 | |
| Descripción | NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FZT655 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1995
7
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE FZT755
PARTMARKING DETAIL FZT655
FZT655
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
150
150
5
2
1
2
-55 to +150
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 150
V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 150
V IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
0.1 µA VCB=125V
0.1 µA VEB=3V
0.5 V
0.5 V
IC=500mA, IB=50mA*
IC=1A, IB=200mA*
1.1 V
IC=500mA, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.0 V
IC=500mA, VCE =5V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
50
50
20
30
IC=10mA, VCE =5V*
300 IC=500mA, VCE =5V*
IC=1A, VCE =5V*
MHz
IC=10mA, VCE =20V
f=20MHz
Output Capacitance
Cobo
20 pF VCB =10V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
3 - 211
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FZT655.PDF ] | |
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