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PDF FZT758 Data sheet ( Hoja de datos )
| Número de pieza | FZT758 | |
| Descripción | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FZT758
ISSUE 2 FEBRUARY 1995
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE FZT658
PARTMARKING DETAIL FZT758
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400 V
Collector-Emitter Voltage
VCEO
-400 V
Emitter-Base Voltage
VEBO
-5 V
Peak Pulse Current
ICM -1 A
Continuous Collector Current
IC
-500 mA
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -400
V IC=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -400
V IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5
V IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
ICBO
ICES
IEBO
VCE(sat)
VBE(sat)
-100
-100
-100
-0.30
-0.25
-0.50
-0.9
nA
nA
nA
V
V
V
V
VCB=-320V
VCE=-320V
VEB=-4V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100mA, IB=-10mA*
IC=-100mA, IB=-10mA*
Base-Emitter Turn On Voltage
Static Forward Current
Transfer Ratio
VBE(on)
hFE
Transition Frequency
fT
50
50
40
50
-1.0 V
IC=-100mA, VCE=-5V*
IC=-1mA, VCE=-5V
IC=-100mA, VCE=-5V*
IC=-200mA, VCE=-10V*
MHz IC=-20mA, VCE=-20V
f=20MHz
Output Capacitance
Switching times
Cobo
ton
toff
20 pF
140 Typical ns
2000 Typical ns
VCB=-20V, f=1MHz
IC=-100mA, VCC=-100V
IB1=10mA, IB2=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 242
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FZT758.PDF ] | |
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