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부품번호 | FZT953 기능 |
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기능 | SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 5 페이지수
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - APRIL 2000
FEATURES
* 5 Amps continuous current , up to 15 Amps peak current
* Very low saturation voltages
* Excellent gain characteristics specified up to 10 Amps
* Ptot = 3 watts
* FZT951 exhibts extremely low equivalent on resistance;
RCE(sat) 55m at 4A
COMPLEMENTARY TYPES - FZT951 = FZT851
FZT953 = FZT853
PARTMARKING DETAILS - DEVICE TYPE IN FULL
FZT951
FZT953
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT951
FZT953
UNIT
Collector-Base Voltage
VCBO
-100
-140
V
Collector-Emitter Voltage
VCEO
-60 -100
V
Emitter-Base Voltage
VEBO
-6 V
Peak Pulse Current
ICM
-15 -10
A
Continuous Collector Current
IC
-5 A
Power Dissipation at Tamb=25°C
Ptot
3W
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 279
FZT953
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -140 -170
V IC=-100A
Collector-Emitter Breakdown V(BR)CER
Voltage
-140 -170
V IC=-1A, RB1k
Collector-Emitter Breakdown V(BR)CEO
Voltage
-100 -120
V IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-6
-8
V IE=-100A
Collector Cut-Off Current
ICBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICER
R 1k
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-50 nA
-1 A
-50 nA
-1 A
-10 nA
-20
-90
-160
-300
-50
-115
-220
-420
mV
mV
mV
mV
-1010 -1170 mV
VCB=-100V
VCB=-100V, Tamb=100°C
VCB=-100V
VCB=-100V, Tamb=100°C
VEB=-6V
IC=-100mA, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-4A, IB=-400mA*
IC=-4A, IB=-400mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-925 -1160 mV IC=-4A, VCE=-1V*
Static Forward
Current Transfer
Transition Frequency
hFE 100 200
100 200 300
50 90
30 50
15
IC=-10mA, VCE=-1V*
IC=-1A, VCE=-1V*
IC=-3A, VCE=-1V*
IC=-4A, VCE=-1V*
IC=-10A, VCE=-1V*
fT 125 MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
65 pF
Switching Times
ton
toff
110 ns
460 ns
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Spice parameter data is available upon request for this device
VCB=-10V, f=1MHz
IC=-2A, IB1=-200mA
IB2=200mA, VCC=-10V
3 - 282
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ FZT953.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FZT951 | SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | Zetex Semiconductors |
FZT953 | SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | Zetex Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |