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부품번호 | FZT955 기능 |
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기능 | PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | ||
제조업체 | Zetex Semiconductors | ||
로고 | |||
전체 5 페이지수
SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 OCTOBER 1995
FEATURES
* 4 Amps continuous current (10 Amps peak current)
* Very low saturation voltages
* Excellent gain characteristics specified up to 3 Amps
PARTMARKING DETAILS DEVICE TYPE IN FULL
COMPLEMENTARY TYPES FZT955 - FZT855
FZT956 - N/A
FZT955
FZT956
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature
Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
FZT955
FZT956
-180 -220
-140 -200
-6
-10 -5
-4 -2
3
-55 to +150
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 284
FZT956
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V(BR)CBO -220 -300
Voltage
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CER -220 -300
V IC=-1µA, RB ≤1kΩ
Collector-Emitter
Breakdown Voltage
V(BR)CEO -200 -240
V IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -6
-8
V IE=-100µA
Collector Cut-Off Current
ICBO
-50 nA VCB=-200V
-1 µA VCB=-200V,Tamb=100°C
Collector Cut-Off Current
ICER
R ≤1kΩ
-50 nA VCB=-200V
-1 µA VCB=-200V,Tamb=100°C
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation VCE(sat)
Voltage
Base-Emitter
Saturation Voltage
VBE(sat)
-30
-120
-168
-970
-10 nA
-50
-165
-275
mV
mV
mV
-1110 mV
VEB=-6V
IC=-100mA,IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-400mA*
IC=-2A, IB=-400mA
Base-Emitter
Turn-On Voltage
VBE(on)
-810 -950 mV IC=-2A, VCE=-5V*
Static Forward
hFE 100 200
Current Transfer Ratio
100 200 300
50 150
10
IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-5A, VCE=-5V*
Transition Frequency
fT
110 MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
32 pF
Switching Times
ton
toff
67
1140
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
VCB=-20V, f=1MHz
IC=-1A, IB1=-100mA
IB2=100mA, VCC=-50V
3 - 287
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ FZT955.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
FZT951 | SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | Zetex Semiconductors |
FZT953 | SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | Zetex Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |